公开(公告)号：DE50306331D1

公开(公告)日：2007-03-08

申请号：DE50306331

申请日：2003-11-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOECKELE UWE ,  JOHNSON ANDREW ,  KESSLER HANS-GEORG ,  NOWIK OREST ,  SCHREIBER KAI-ALEXANDER ,  WINZIG HUBERT ,  SISTERN IAN

IPC: C23C16/44 ,  B08B6/00 ,  B08B7/00 ,  C23C20060101 ,  C23F4/00

Abstract: A method for cleaning silicon-containing deposits in process chamber is described. Fluorine-containing compounds and additional compounds are used for the cleaning. The deposits are removed using a cleaning gas contains fluorine-containing compounds, at least 50% of which have more than one carbon atom and are C 4 F 8 or C 2 F 6 molecules, and additional compounds, at least 50% of which have at least one oxygen atom and at least 50% are N 2 O molecules. A pressure in the chamber is between 266 Pa and 665 Pa. The method permits economical and environmentally friendly cleaning of the process chamber.