公开(公告)号：DE19828669C2

公开(公告)日：2003-08-21

申请号：DE19828669

申请日：1998-06-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOISIEK MICHAEL ,  VIETZKE DIRK

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/786 ,  H01L21/331 ,  H01L21/86

公开(公告)号：AT416479T

公开(公告)日：2008-12-15

申请号：AT99967868

申请日：1999-12-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOISIEK MICHAEL

IPC: H01L29/06 ,  H01L29/749 ,  H01L29/73 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

公开(公告)号：DE19919130B4

公开(公告)日：2005-10-06

申请号：DE19919130

申请日：1999-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOISIEK MICHAEL

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/808 ,  H01L29/78

公开(公告)号：DE59914922D1

公开(公告)日：2009-01-15

申请号：DE59914922

申请日：1999-12-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOISIEK MICHAEL

IPC: H01L29/06 ,  H01L29/749 ,  H01L29/73 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

公开(公告)号：DE59410347D1

公开(公告)日：2004-02-05

申请号：DE59410347

申请日：1994-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWALKE UDO ,  STOISIEK MICHAEL

IPC: H01L21/8249 ,  H01L27/06 ,  H01L29/74 ,  H01L29/78

Abstract: In an integrated circuit arrangement with at least one power component and low-voltage components, at least one power component is produced in a semiconductor substrate, at least one contact of the power component being arranged on a main surface of the substrate (1). The contact (11) is covered with an insulation layer (13), on the surface of which at least one thin-film component, in particular a thin-film transistor (14, 15, 16, 17, 18), is produced above the contact (11).