公开(公告)号：WO0135466A3

公开(公告)日：2001-11-22

申请号：PCT/EP0011090

申请日：2000-11-09

Applicant: INFINEON TECHNOLOGIES AG ,  HIRLER FRANZ ,  STECHER MATTHIAS ,  NELLE PETER ,  VIETZKE DIRK

Inventor： HIRLER FRANZ ,  STECHER MATTHIAS ,  NELLE PETER ,  VIETZKE DIRK

IPC: H01L21/205 ,  H01L29/161 ,  H01L29/167 ,  H01L29/78 ,  H01L21/20

CPC classification number: H01L29/7813 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L29/161 ,  H01L29/167

Abstract: In order to prevent misfit caused by the high level of doping, the semiconductor substrate (1) of a field effect transistor, which comprises a body zone (3), is additionally doped with germanium or with carbon that serve to compensate for the misfit.

Abstract translation: 为了避免由于高掺杂失配，在半导体基板（1），其具有主体区（3）的场效应晶体管，另外掺杂有锗或碳作为补偿。

公开(公告)号：DE19929235B4

公开(公告)日：2005-06-23

申请号：DE19929235

申请日：1999-06-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VIETZKE DIRK ,  MOSIG KARSTEN

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/336

公开(公告)号：DE19953333B4

公开(公告)日：2004-07-15

申请号：DE19953333

申请日：1999-11-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NELLE PETER ,  SCHAEFER HERBERT ,  VIETZKE DIRK ,  STECHER MATTHIAS ,  BAUMGARTL JOHANNES ,  PERI HERMANN

IPC: H01L21/74 ,  H01L21/761 ,  H01L29/06

公开(公告)号：DE19828669C2

公开(公告)日：2003-08-21

申请号：DE19828669

申请日：1998-06-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOISIEK MICHAEL ,  VIETZKE DIRK

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/786 ,  H01L21/331 ,  H01L21/86

公开(公告)号：DE19840031C2

公开(公告)日：2002-09-19

申请号：DE19840031

申请日：1998-09-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VIETZKE DIRK ,  STECHER MATTHIAS ,  MOSIG KARSTEN ,  PERI HERMANN ,  SCHWETLICK WERNER ,  MAIR ANDREAS ,  KOTZ DIETMAR ,  KROTSCHECK THOMAS ,  GRILZ REINHOLD

IPC: H01L21/761 ,  H01L29/10 ,  H01L29/78

公开(公告)号：DE10014659C2

公开(公告)日：2002-08-01

申请号：DE10014659

申请日：2000-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VIETZKE DIRK ,  STECHER MATTHIAS ,  SCHULZE HANS-JOACHIM ,  PERI HERMANN ,  NELLE PETER ,  PLOSS REINHARD ,  KANERT WERNER

IPC: H01L21/762 ,  H01L27/088 ,  H01L29/32 ,  H01L29/78 ,  H01L27/08 ,  H01L23/58 ,  H01L29/06

公开(公告)号：DE19953333A1

公开(公告)日：2001-05-31

申请号：DE19953333

申请日：1999-11-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NELLE PETER ,  SCHAEFER HERBERT ,  VIETZKE DIRK ,  STECHER MATTHIAS ,  BAUMGARTL JOHANNES ,  PERI HERMANN

IPC: H01L21/74 ,  H01L21/761 ,  H01L29/06 ,  H01L21/76

Abstract: Arrangement for realizing a trenched layer (2, 2') with a dopant comprises a counter compensation material inserted into the trenched layer, the material compensating for lattice mismatches. Preferred Features: The dopant is boron or phosphorus and germanium is the counter compensation material, or the dopant is arsenic or antimony and carbon is the counter compensation material.

公开(公告)号：DE10014659A1

公开(公告)日：2001-10-11

申请号：DE10014659

申请日：2000-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VIETZKE DIRK ,  STECHER MATTHIAS ,  SCHULZE HANS-JOACHIM ,  PERI HERMANN ,  NELLE PETER ,  PLOSS REINHARD ,  KANERT WERNER

IPC: H01L21/762 ,  H01L27/088 ,  H01L29/32 ,  H01L29/78 ,  H01L27/08 ,  H01L29/04 ,  H01L29/06

Abstract: The semiconducting circuit arrangement has a substrate (10) of a first conductor type (p) and a component region (20) on the front side of the substrate with a number of insulated troughs (25,26,28) of a second conductor type (n). At least one power component in the component region has a load connection (25) of the second conductor type for connecting a load. The substrate has a recombination zone (RZ) for the recombination of minority carriers injected into the substrate from the load connection.

公开(公告)号：DE19953883A1

公开(公告)日：2001-05-23

申请号：DE19953883

申请日：1999-11-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NELLE PETER ,  STECHER MATTHIAS ,  HIRLER FRANZ ,  VIETZKE DIRK

IPC: H01L21/205 ,  H01L29/161 ,  H01L29/167 ,  H01L29/78

Abstract: The invention relates to a system for reducing the closing resistance of p-channel or n-channel field effect transistors by highly doping the semiconductor substrate (1). In order to prevent misfit caused by the high level of doping, the semiconductor substrate (1) is additionally doped with germanium or with carbon that serve to compensate for the misfit.