公开(公告)号：DE10335461A1

公开(公告)日：2005-03-03

申请号：DE10335461

申请日：2003-08-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  STOTTKO BERND ,  LEMKE MARKO

IPC: H01L21/033 ,  H01L21/314 ,  H01L21/318 ,  H01L21/32 ,  H01L21/311 ,  H01L21/31

Abstract: The production of a silicon nitride mask on a silicon-containing layer on a semiconductor substrate (1) comprises forming a pad oxide layer (2) on the silicon-containing layer, baking the pad oxide layer in a nitrogen-containing atmosphere to partially convert the pad oxide layer into a pad oxynitride layer, forming a silicon nitride layer (3) on the pad oxide layer, forming a photolacquer layer (4) to form opening regions in the silicon nitride layer and the backed pad oxide layer, anisotropically etching the silicon nitride layer and the backed pad oxide layer using the photolacquer structure to form the silicon nitride mask, and removing the photolacquer structure.

公开(公告)号：DE10142340A1

公开(公告)日：2003-03-27

申请号：DE10142340

申请日：2001-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZIMMERMANN JENS ,  STOTTKO BERND ,  WELZEL MARTIN

IPC: H01L21/60 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L21/336

Abstract: A field-effect transistor is formed with a gate stack, which is patterned by a hard mask and contains a first part of a gate electrode and a second part of the gate electrode that is disposed on the first part. The second part of the gate electrode, which is disposed between the patterned hard mask and the first part of the gate electrode, is laterally recessed, so that the second part of the gate electrode, in a contact hole which is subsequently formed, is at a greater distance from a contact plug with which the contact hole is filled, in order to avoid short circuits.

公开(公告)号：DE10142340B4

公开(公告)日：2006-04-13

申请号：DE10142340

申请日：2001-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZIMMERMANN JENS ,  STOTTKO BERND ,  WELZEL MARTIN

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/60 ,  H01L21/8242 ,  H01L27/108

Abstract: A field-effect transistor is formed with a gate stack, which is patterned by a hard mask and contains a first part of a gate electrode and a second part of the gate electrode that is disposed on the first part. The second part of the gate electrode, which is disposed between the patterned hard mask and the first part of the gate electrode, is laterally recessed, so that the second part of the gate electrode, in a contact hole which is subsequently formed, is at a greater distance from a contact plug with which the contact hole is filled, in order to avoid short circuits.