公开(公告)号：DE10142340B4

公开(公告)日：2006-04-13

申请号：DE10142340

申请日：2001-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZIMMERMANN JENS ,  STOTTKO BERND ,  WELZEL MARTIN

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/60 ,  H01L21/8242 ,  H01L27/108

Abstract: A field-effect transistor is formed with a gate stack, which is patterned by a hard mask and contains a first part of a gate electrode and a second part of the gate electrode that is disposed on the first part. The second part of the gate electrode, which is disposed between the patterned hard mask and the first part of the gate electrode, is laterally recessed, so that the second part of the gate electrode, in a contact hole which is subsequently formed, is at a greater distance from a contact plug with which the contact hole is filled, in order to avoid short circuits.

公开(公告)号：DE19910886B4

公开(公告)日：2008-08-14

申请号：DE19910886

申请日：1999-03-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UHLIG INES ,  ZIMMERMANN JENS ,  WEGE STEPHAN

IPC: H01L21/762 ,  H01L21/3065 ,  H01L21/8242

Abstract: A method for fabricating a trench isolation for electrically active components in a semiconductor component. A mask is applied to a semiconductor substrate. Subsequently, a trench having side walls is formed in the semiconductor substrate by performing a dry etching process using at least one etching gas such that during the dry etching process, polymers are produced that at least partly cover the side walls of the trench and thereby at least partially protect the side walls against an etching attack from the etching gas. The etching gas is provided with a compound that is selected from the group consisting of at least one hydrocarbon compound and a fluorinated hydrocarbon compound. The trench is filled with an insulating oxide.

公开(公告)号：DE50014729D1

公开(公告)日：2007-12-06

申请号：DE50014729

申请日：2000-03-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UHLIG INES ,  ZIMMERMANN JENS ,  WEGE STEPHAN

IPC: H01L21/762 ,  H01L21/3065

Abstract: A method for fabricating a trench isolation for electrically active components in a semiconductor component. A mask is applied to a semiconductor substrate. Subsequently, a trench having side walls is formed in the semiconductor substrate by performing a dry etching process using at least one etching gas such that during the dry etching process, polymers are produced that at least partly cover the side walls of the trench and thereby at least partially protect the side walls against an etching attack from the etching gas. The etching gas is provided with a compound that is selected from the group consisting of at least one hydrocarbon compound and a fluorinated hydrocarbon compound. The trench is filled with an insulating oxide.

公开(公告)号：DE10142340A1

公开(公告)日：2003-03-27

申请号：DE10142340

申请日：2001-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZIMMERMANN JENS ,  STOTTKO BERND ,  WELZEL MARTIN

IPC: H01L21/60 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L21/336

Abstract: A field-effect transistor is formed with a gate stack, which is patterned by a hard mask and contains a first part of a gate electrode and a second part of the gate electrode that is disposed on the first part. The second part of the gate electrode, which is disposed between the patterned hard mask and the first part of the gate electrode, is laterally recessed, so that the second part of the gate electrode, in a contact hole which is subsequently formed, is at a greater distance from a contact plug with which the contact hole is filled, in order to avoid short circuits.

公开(公告)号：DE19903597C2

公开(公告)日：2001-09-27

申请号：DE19903597

申请日：1999-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SPERLICH HANS-PETER ,  ZIMMERMANN JENS

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/8242

Abstract: The fabrication method provides for an etched isolation trench to be lined, if appropriate firstly with a thin thermal oxide layer, and then with an oxidizable auxiliary layer. The auxiliary layer consumes oxygen during subsequent thermal processes, thereby avoiding oxidation of deeper structures, in particular of an insulation collar in a capacitor trench.