公开(公告)号：DE10335460A1

公开(公告)日：2005-03-10

申请号：DE10335460

申请日：2003-08-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  HUMMELTENBERG REINHARD

IPC: C23C16/46 ,  C30B25/10 ,  H01L21/318 ,  H01L21/205 ,  H01L21/314 ,  H01L21/324

Abstract: Wafers (10) are arranged one behind the other in a reaction chamber (1) to which gases are supplied. A control device (12) forms for a first period of time a temperature profile across the spaced-apart wafers using a heating device (2), with a downward gradient in the flow direction of the gas. A temperature profile is then formed for a second period of time with a downward gradient against the flow direction of the gas. During the second period, the gases are supplied to form the thin films by pyrolytic decomposition. An independent claim is included for a further method.

公开(公告)号：DE102005057255B4

公开(公告)日：2007-09-20

申请号：DE102005057255

申请日：2005-12-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  HECHT THOMAS ,  STADTMUELLER MICHAEL ,  KIM YEONG KWAN ,  KAPTEYN CHRISTIAN ,  SCHROEDER UWE ,  SPITZER ANDREAS

IPC: H01L27/108 ,  H01L21/8242

Abstract: The capacitor has a first electrode layer (103), a second electrode layer (104,105) and a dielectric intermediate layer (110) between the electrode layers. The dielectric layer contains a high k dielectric and at least one component containing silicon. Independent claims also cover a method of manufacture.

公开(公告)号：DE102004012856A1

公开(公告)日：2005-06-30

申请号：DE102004012856

申请日：2004-03-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3105

Abstract: A process for producing a semiconductor structure comprises preparing a semiconductor substrate (1), forming an oxygen diffusion prevention liner layer (5) on top, and forming a dielectric layer (10) on the liner. The dielectric layer contains oxygen and is formed using atomic layer chemical vapour deposition. The dielectric layer is thermally oxidised in an oxygen atmosphere. The diffusion prevention liner prevents oxidation of the substrate below.

公开(公告)号：DE102004024105A1

公开(公告)日：2005-06-09

申请号：DE102004024105

申请日：2004-05-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  STORBECK OLAF ,  STADTMUELLER MICHAEL ,  KAINZ STEFAN

IPC: H01L21/334 ,  H01L21/8242 ,  H01L27/108

公开(公告)号：DE102004027271A1

公开(公告)日：2005-12-29

申请号：DE102004027271

申请日：2004-06-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY

IPC: H01L21/334 ,  H01L21/8242

Abstract: Production of a trench capacitor in which a trench (4) is etched into a substrate (1) coated with a layer of Pa dioxide (2) and Si nitride (3). The upper part of the trench has a sacrificial collar in Al oxide (6) which is not structured by the Al 2O 3-layer masked region, and the Al 2O 3 mask is removed after subsequent structuring cby etching. Before deposition of the sacrificial collar (6) an intermediate Si monoxide layer (8) of sufficient thickness is deposited on the masked surface.

公开(公告)号：DE10335461A1

公开(公告)日：2005-03-03

申请号：DE10335461

申请日：2003-08-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  STOTTKO BERND ,  LEMKE MARKO

IPC: H01L21/033 ,  H01L21/314 ,  H01L21/318 ,  H01L21/32 ,  H01L21/311 ,  H01L21/31

Abstract: The production of a silicon nitride mask on a silicon-containing layer on a semiconductor substrate (1) comprises forming a pad oxide layer (2) on the silicon-containing layer, baking the pad oxide layer in a nitrogen-containing atmosphere to partially convert the pad oxide layer into a pad oxynitride layer, forming a silicon nitride layer (3) on the pad oxide layer, forming a photolacquer layer (4) to form opening regions in the silicon nitride layer and the backed pad oxide layer, anisotropically etching the silicon nitride layer and the backed pad oxide layer using the photolacquer structure to form the silicon nitride mask, and removing the photolacquer structure.

公开(公告)号：DE10142267A1

公开(公告)日：2003-03-27

申请号：DE10142267

申请日：2001-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  STADTMUELLER MICHAEL ,  OTTENWAELDER DIETMAR ,  MORGENSCHWEIS ANJA

IPC: C23C16/34

Abstract: Process for depositing silicon nitride on a substrate (2) comprises subjecting the substrate to a stream containing a silicon component and a nitrogen component in an oven (1) under the action of heat. The temperature in the oven is adjusted to 600-645 deg C or not more than 650 deg C. Preferred Features: The temperature is adjusted to approximately 620 deg C. The silicon component is dichlorosilane and the nitrogen component is ammonia. The substrate is made from silicon.

公开(公告)号：DE10335460B4

公开(公告)日：2008-02-28

申请号：DE10335460

申请日：2003-08-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  HUMMELTENBERG REINHARD

IPC: H01L21/205 ,  C23C16/46 ,  C30B25/10 ,  H01L21/314 ,  H01L21/318 ,  H01L21/324

Abstract: Wafers (10) are arranged one behind the other in a reaction chamber (1) to which gases are supplied. A control device (12) forms for a first period of time a temperature profile across the spaced-apart wafers using a heating device (2), with a downward gradient in the flow direction of the gas. A temperature profile is then formed for a second period of time with a downward gradient against the flow direction of the gas. During the second period, the gases are supplied to form the thin films by pyrolytic decomposition. An independent claim is included for a further method.

公开(公告)号：DE102006024214A1

公开(公告)日：2007-11-29

申请号：DE102006024214

申请日：2006-05-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTZE BERND ,  BERNHARDT HENRY ,  BERNHARDT FRANK

IPC: H01L21/8242 ,  H01L27/108

Abstract: The method involves forming a metal oxide layer (302) and a metal nitride layer (303). The metal nitride layer is oxidized in order to form another metal oxide layer. The layer sequence is heated in order to form a mixing layer from the two metal oxide layers. The metal oxide layer (302) is made of aluminum oxide and the metal nitride layer is made of titanium nitride. The metal oxide and the metal nitride layers are formed by an atomic layer deposition process.

公开(公告)号：DE102005057255A1

公开(公告)日：2007-06-14

申请号：DE102005057255

申请日：2005-12-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARDT HENRY ,  HECHT THOMAS ,  STADTMUELLER MICHAEL ,  KIM YEONG KWAN ,  KAPTEYN CHRISTIAN ,  SCHROEDER UWE ,  SPITZER ANDREAS

IPC: H01L27/108 ,  H01L21/8242

Abstract: The capacitor has a first electrode layer (103), a second electrode layer (104,105) and a dielectric intermediate layer (110) between the electrode layers. The dielectric layer contains a high k dielectric and at least one component containing silicon. Independent claims also cover a method of manufacture.