무선 주파수 디바이스와 그 대응 방법

    公开(公告)号:KR20180071180A

    公开(公告)日:2018-06-27

    申请号:KR20170174033

    申请日:2017-12-18

    CPC classification number: H04B3/462 H04B17/12

    Abstract: 위상오프셋을결정하는디바이스및 방법이개시된다. 제 1 테스트신호는제 1 RF 회로부분으로부터제 2 RF 회로부분으로전송되고, 제 1 테스트신호와기준신호(ref)의위상차가측정된다. 제 2 테스트신호는제 2 RF 회로부분으로부터제 1 RF 회로부분으로전송되고, 제 2 테스트신호와기준신호(ref)의제 2 위상차가측정된다. 제 1 및제 2 회로부분사이의접속부(14)와기준신호를공급하는라인(15)의위상오프셋은제 1 및제 2 위상차에기초하여결정된다.

    INTEGRATED SEMICONDUCTOR CIRCUIT WITH A VARACTOR
    4.
    发明申请
    INTEGRATED SEMICONDUCTOR CIRCUIT WITH A VARACTOR 审中-公开
    带有变压器的集成半导体电路

    公开(公告)号:WO03017371A3

    公开(公告)日:2003-08-28

    申请号:PCT/DE0202953

    申请日:2002-08-12

    CPC classification number: H01L29/94 H01L27/0808 H03J3/185 H03K3/0315

    Abstract: VCO (voltage controlled oscillator) circuits can be manufactured with integrated semiconductor circuits which contain electrical resonant circuits, the resonance behaviour of which may be altered by means of a varactor (2), in other words, a capacitor with variable capacitance. Varactors (2) are nowadays produced with a MOSFET structure, thus comprising a gate electrode (3) and one source- (6) and one drain-implant (7) each, where the latter are electrically short-circuited and, together with the semiconductor substrate beneath the gate electrode (3), form one of the two capacitor plates. According to the invention, the capacitance ratio of the maximum capacitance to the minimum capacitance of such a varactor (2) may be increased, whereby the source- and drain-implants (6, 7) are arranged completely outside the base surface (8) of the layer stack (5) of the gate electrode (3) in the lateral direction and the semiconductor substrate (1), beneath the gate oxide layer (4), between the source-implant (6) and the drain-implant (7) is homogeneously doped in the lateral direction.

    Abstract translation: 半导体集成电路可用于制造包含振荡行为受变容二极管(2)控制的电谐振电路的VCO(压控振荡器)电路, 可变容量的电容器可以改变。 集成的变容二极管(2)现在在MOSFET结构中制造, 有栅电极(3)和相应的源(6)和漏极注入(7),后者是电短路,并且与栅电极(3)形式的两个电容器板中的一个之下的半导体基板在一起。 为了提高最大容量的电容比这样的可变电抗器(2)的最小容量,建议,源极/漏极注入(6,7)在横向方向上,完全不在所述基部(8)的层的堆(5)的栅极的 3)并且在源极注入物(6)和漏极注入物(7)之间在横向上均匀地掺杂栅极氧化物层(4)下方的半导体衬底(1)。

    INTEGRATED TUNEABLE CAPACITOR
    5.
    发明申请
    INTEGRATED TUNEABLE CAPACITOR 审中-公开
    集成可调谐能力

    公开(公告)号:WO02082548A3

    公开(公告)日:2003-02-06

    申请号:PCT/DE0201206

    申请日:2002-04-03

    CPC classification number: H01L29/94 H01L27/0808

    Abstract: Disclosed is an integrated tuneable capacitor provided with a semiconductor area (2) which is preferably N-doped and formed in a semiconductor body (1); an insulating thick oxide area (4) whose surface borders on the main side (3) of the semiconductor body (2); and a thin oxide area (5) which is also adjacent to the main side (3) and which is arranged on the above the semiconductor area (2) in addition to having a lower layer thickness than the thick oxide area (4). A gate electrode (6) is placed on the thin oxide area (5) and connection areas (7) are provided in the semiconductor area (2). The inventive capacitor has a greater tuning range in comparison with transistor varactors. The integrated tuneable capacitor can be used, for instance, in LC oscillators in integrated VCOs.

    Abstract translation: 它是一个集成的,可调谐电容由半导体区域(2),其优选为n掺杂的指示,形成在半导体主体(1),用绝缘厚氧化物区域(4),其是平坦的主侧(3)的半导体主体 相邻并且具有薄氧化物区(5)的邻近也与主面(3)和被布置在半导体区域(2)和层厚度比厚氧化物区域小上述(4)。 在薄氧化区域(5)的栅极电极(6)(7)被提供,并且该半导体区域(2)的连接区域。 相反晶体管的变容二极管具有用于较大的调谐范围中所述的容量。 该集成可调谐电容可以用于,例如,在集成的VCO的LC振荡器。

    CIRCUIT ARRANGEMENT
    7.
    发明申请
    CIRCUIT ARRANGEMENT 审中-公开
    电路装置

    公开(公告)号:WO2004053668A3

    公开(公告)日:2004-09-23

    申请号:PCT/DE0303990

    申请日:2003-12-04

    Inventor: TIEBOUT MARC

    CPC classification number: G06F1/10

    Abstract: The invention relates to a circuit arrangement (300). The circuit arrangement (300) contains a load element (302) and a clock pulse generator (301) which is configured in such a way that it can provide the load element (302) with a clock pulse signal. The circuit arrangement (300) also contains at least one injection locked oscillator circuit which is arranged between the clock pulse generator (301) and the load element (302).

    Abstract translation: 本发明涉及一种电路装置(300)。 所述的电路装置(300)包括一个负载元件(302)和时钟(301)被适配以使得与它的负载元件(302),可以提供一个时钟信号。 此外,该电路装置中包含(300)中的时钟(301)和连接在所述负载元件(302)注入锁定振荡器电路(303)之间的至少一个。

    INTEGRATED CIRCUIT
    8.
    发明申请
    INTEGRATED CIRCUIT 审中-公开
    集成电路

    公开(公告)号:WO03094339A2

    公开(公告)日:2003-11-13

    申请号:PCT/DE0301204

    申请日:2003-04-10

    CPC classification number: H03D7/1441 H03D7/1458 H03D7/1483 H03D2200/0043

    Abstract: Disclosed is an integrated circuit (100) comprising a mixer circuit and a transformer (101). Said mixer circuit is provided with an active mixer unit (102), a signal-amplifying unit (103), two reference oscillator connections (LO+, LO-), two high-frequency connections (RF+, RF-), and two intermediate-frequency connections (IF+, IF-). The inventive integrated circuit (100) is arranged such that the transformer (101) galvanically isolates the two high-frequency connections (RF+, RF-) from the active mixer unit (102).<>

    Abstract translation: 一种集成电路(100)包括混频器电路和一个变压器(101),其中,所述混频器电路(有源混频器单元(102)与信号放大单元(103),两个参考振荡器端子(LO +,LO-),两个射频端子 RF +,RF-)和两个中频端子(IF +,IF-),并且其中,所述集成电路(100)被布置成使得所述变压器(101),从所述有源混频器单元在两个射频终端(RF +,RF-) (102)是电绝缘。

    System und Verfahren für einen spannungsgesteuerten Oszillator

    公开(公告)号:DE102015212090B9

    公开(公告)日:2018-06-28

    申请号:DE102015212090

    申请日:2015-06-29

    Abstract: Oszillator, welcher Folgendes umfasst:eine Tankschaltung undeine Oszillatorkernschaltung, welche mehrere über Kreuz geschaltete Verbundtransistoren umfasst, die mit der Tankschaltung gekoppelt sind, wobei jeder der mehreren Verbundtransistoren einen Bipolartransistor und einen Feldeffekttransistor (FET) mit einer Source-Elektrode, welche mit einer Basis des Bipolartransistors gekoppelt ist, umfasst, wobei eine Drain-Elektrode des FETs mit einem Kollektor des Bipolartransistors gekoppelt ist.

    Gemischter Analog-Digital-Pulsweitenmodulator

    公开(公告)号:DE102016120228A1

    公开(公告)日:2017-06-01

    申请号:DE102016120228

    申请日:2016-10-24

    Abstract: Ein Pulsweitenmodulationssystem umfasst eine analoge Komponente und eine digitale Komponente. Die analoge Komponente wird betrieben, um ein Lokaloszillatorsignal mit unterschiedlichen Phasenverschiebungen zu trennen und einen Versatz (d. h. eine Zeitverzögerung) zu analogen Signalen einzuführen, die an einem Eingang empfangen werden, mit einem Abstimmungsbetrieb, der die analogen Signalen in dem analogen (kontinuierlichen Zeit-)Bereich feinabstimmt. Die analoge Komponente umfasst eine Mehrzahl von analogen Verzögerungsleitungen, die jeweils Trägersignale mit unterschiedlichen Phasenverschiebungen verarbeiten. Digitale Verzögerungsleitungen wandeln die analogen Signale zu digitalen Rechteckwellen mit der gleichen Zeitverzögerung und mit der gleichen Auflösung wie das analoge Ausgangssignal um.

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