公开(公告)号：CA2305317A1

公开(公告)日：1999-04-08

申请号：CA2305317

申请日：1998-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIMME HANS-JORG ,  DRAXELMAYR DIETER

IPC: G01D5/24 ,  G01L9/00 ,  G01L9/12 ,  G01L27/00 ,  G01M17/007

Abstract: The invention relates to a sensor (1), especially a micromechanical pressure sensor with two similar capacitive partial structures (C1, C2) which are coupled to an evaluation circuit (9, 11). In the case of in-phase control, an additive signal is provided as a pressure-dependent useful signal. In the case of opposite phase control, a differential signal is provided as a diagnostic signal.

公开(公告)号：AU2003257428A8

公开(公告)日：2004-03-11

申请号：AU2003257428

申请日：2003-07-01

Applicant: NOKIA MOBILE PHONES LTD ,  INFINEON TECHNOLOGIES AG

Inventor： ELLA JUHA SAKARI ,  TIMME HANS-JORG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H7/42 ,  H01F17/00 ,  H03H7/38 ,  H03H9/00 ,  H03H9/58 ,  H03H9/70

Abstract: The filter circuit has a symmetrical gate (204), an unsymmetrical gate (202), a series circuit filter stage (206) and a symmetry component (208) between the symmetrical gate and the unsymmetrical gate, the symmetry component and the filter stage provided on a common substrate (S). The filter stage can have at least one series bulk acoustic wave resonator and at least one parallel bulk acoustic wave resonator.

公开(公告)号：AU2003257428A1

公开(公告)日：2004-03-11

申请号：AU2003257428

申请日：2003-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELLA JUHA SAKARI ,  TIMME HANS-JORG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H7/42 ,  H01F17/00 ,  H03H7/38 ,  H03H9/00 ,  H03H9/58 ,  H03H9/70

Abstract: The filter circuit has a symmetrical gate (204), an unsymmetrical gate (202), a series circuit filter stage (206) and a symmetry component (208) between the symmetrical gate and the unsymmetrical gate, the symmetry component and the filter stage provided on a common substrate (S). The filter stage can have at least one series bulk acoustic wave resonator and at least one parallel bulk acoustic wave resonator.

公开(公告)号：CA2340059C

公开(公告)日：2003-12-23

申请号：CA2340059

申请日：1999-08-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIMME HANS-JORG ,  BEVER THOMAS ,  AIGNER ROBERT

IPC: G01L9/12 ,  B81B3/00 ,  B81C1/00 ,  H01L29/84 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method, comprising the following steps: a) preparing a doped semiconductor wafer (4); b) applying an epitaxial layer (1) that is doped in such a way that a jump in the charge carrier density in the interface (11) between the semiconductor wafer and the epitaxial layer occurs; c) optionall y etching ventilation holes (2) traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer (9), at least one spacing layer (10), a membrane (5) and optionally a semiconductor circuit (8) on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole (6) on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interfac e between the wafer (4) and the epitaxial layer (1) by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.

公开(公告)号：CA2340059A1

公开(公告)日：2000-02-24

申请号：CA2340059

申请日：1999-08-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEVER THOMAS ,  TIMME HANS-JORG ,  AIGNER ROBERT

IPC: G01L9/12 ,  B81B3/00 ,  B81C1/00 ,  H01L29/84 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method, comprising the following steps: a) preparing a doped semiconductor wafer (4); b) applying an epitaxial layer (1) that is doped in such a way that a jump in the charge carrier density in the interface (11) between the semiconductor wafer and the epitaxial layer occurs; c) optionall y etching ventilation holes (2) traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer (9), at least one spacing layer (10), a membrane (5) and optionally a semiconductor circuit (8) on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole (6) on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interfac e between the wafer (4) and the epitaxial layer (1) by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.