公开(公告)号：JP2004159339A

公开(公告)日：2004-06-03

申请号：JP2003377295

申请日：2003-11-06

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： MARKSTEINER STEPHAN ,  FATTINGER GERNOT ,  AIGNER ROBERT ,  KAITILA JYRKI

IPC: H03H9/56 ,  H03H9/17 ,  H03H9/58

CPC classification number: H03H9/175

Abstract: PROBLEM TO BE SOLVED: To provide a BAW (bulk acoustic wave) resonator which has a plurality of layers to increase the function of the resonator.
SOLUTION: The BAW resonator includes a piezoelectric layer 102, a first electrode 104 on a front surface, a second electrode 106 on the opposite surface, a substrate 108, and an acoustic reflector 110 provided between the substrate 108 and the second electrode 106. The acoustic reflector 110 has a plurality of alternately-arranged layers made of a material having a high acoustic impedance and made of a material having a low acoustic impedance. The function of the acoustic reflector 110 is determined by the reflectivity of longitudinal wave and the reflectivity of traverse wave which exist in the BAW resonator 100 with a resonant frequency of the BAW resonator 100. The acoustic reflector 110 and layers 106a and 106b provided between the acoustic reflector 110 and the piezoelectric layer 102 are chosen so that transmittance of the longitudinal wave and transmittance of the traverse wave at the resonant frequencyare less than -10dB, referring to the number of these layers, the material and thickness thereof.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2005260964A

公开(公告)日：2005-09-22

申请号：JP2005066389

申请日：2005-03-09

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H9/17 ,  H01L41/08 ,  H03H3/02 ,  H03H3/04 ,  H03H9/02 ,  H03H9/15 ,  H03H9/54 ,  H03H9/56

CPC classification number: H03H9/564 ,  H03H9/02118

Abstract: PROBLEM TO BE SOLVED: To provide a bulk acoustic wave filter having a suppressed side passbands particularly inside an attenuation band.
SOLUTION: A bulk acoustic wave (BAW) filter (40) is manufactured from thin film bulk acoustic wave resonators. This BAW filter comprises a substrate (14), a resonator section (11) and an acoustic mirror section (12). Further it comprises a detuning component (31) positioned in the resonator section (11) to provide precise passband characteristics and an additional detuning component (41) in the acoustic mirror section (12) to suppress unwanted side-passband characteristics.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有抑制的侧通带的体声波滤波器，特别是在衰减频带内。 解决方案：由薄膜体声波谐振器制造体声波（BAW）滤波器（40）。 该BAW滤波器包括衬底（14），谐振器部分（11）和声镜部分（12）。 此外，它包括位于谐振器部分（11）中以提供精确通带特性的失谐部件（31）和在声镜部分（12）中的附加失谐部件（41），以抑制不需要的侧通带特性。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2007209000A

公开(公告)日：2007-08-16

申请号：JP2007041493

申请日：2007-02-21

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H03H3/04 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/253 ,  H03H3/02 ,  H03H9/17

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a layer having a locally-adapted or predetermined layer thickness characteristics. SOLUTION: (a) At least one layer (7) is formed on a substrate. (b) A removing shape for the formed layer is determined. (c) Irradiation of the upside of the layer, with at least one ion beam (9), is performed at least once so that the layer (7) is locally etched at the place of the ion beam according to the removal characteristics. As a result, the layer having the locally-adapted or predetermined layer thickness characteristic can be formed. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有局部适应或预定层厚度特性的层的制造方法。 解决方案：（a）在基板上形成至少一层（7）。 （b）确定形成层的去除形状。 （c）至少一个离子束（9）至少进行一次照射该层的上侧，使得根据去除特性在层离子束的位置局部蚀刻层（7）。 结果，可以形成具有局部适应或预定层厚度特性的层。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：WO0209131A2

公开(公告)日：2002-01-31

申请号：PCT/EP0107604

申请日：2001-07-03

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17 ,  H01G

CPC classification number: H03H9/175 ,  H01L37/02 ,  H01L41/319

Abstract: The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), said auxiliary layer ensuring that the orientation of the layer (S) is homogenous as it grows during the production process. The auxiliary layer (H) preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.

Abstract translation: 所述层序列具有下部电极（U），上电极（O）和一个插入层（S），其是压电或热电。 下部电极（U）和所述层（S）之间是一个辅助层（H）被布置，其用于在制造过程中的层（S）的均匀定向性的增长。 辅助层（H）优选地基本上无定形的硅，非晶硅或非晶氮化硅组成。

公开(公告)号：WO02095085A8

公开(公告)日：2002-12-19

申请号：PCT/EP0105889

申请日：2001-05-22

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H01L41/22 ,  C23C14/58 ,  C23C16/56 ,  H01C17/24 ,  H01L41/09 ,  H01L41/187 ,  H03H3/04 ,  H01J37/305

CPC classification number: C23C14/5833 ,  C23C14/58 ,  C23C14/5873 ,  C23C16/56 ,  C23F4/00 ,  H01C17/2404 ,  H03H3/04 ,  H03H2003/0414

Abstract: The invention relates to a method for producing a layer with a locally adapted or predefined layer thickness profile. Said method comprises the following steps: a) at least one layer (7) is applied to a substrate, b) a removal profile is determined for the applied layer and c) at least one ion beam (9) is guided over the layer at least once, in such a way that the layer (7) is etched locally at the site of the ion beam, in accordance with the removal profile, thus creating a layer with a locally adapted or predefined layer thickness profile.

Abstract translation: 根据本发明，提供了一种方法，用于与局部适配或预定义的层厚度分布产生层，其包括以下步骤：a）至少一个层被施加到基底上，b）一种去除轮廓被确定为所施加的层（7），和 c）至少一个离子束（9）在层引导至少一次，使得在根据所述去除轮廓在所述离子束的位置的层（7）中，用一种适合局部或预定义的层厚度分布的层的局部蚀刻产生。

公开(公告)号：WO0209202A3

公开(公告)日：2002-05-30

申请号：PCT/EP0108248

申请日：2001-07-17

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H01L41/24

CPC classification number: H03H3/02 ,  H01L37/02 ,  H01L41/319 ,  H03H2003/025

Abstract: At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositing a conductive material and then chemically-mechanically polished in order to smooth out surface roughness. The thickness of the deposited conductive material is preferably reduced by 10 nm to 100 nm by the chemical-mechanical polishing process.

Abstract translation: 作为层序列的部分，至少一个下电极（U），在层（S），其是压电或热电，和它产生的上部电极（O）。 由导电材料形成的下部电极（U）被沉积，然后以平滑的表面粗糙度化学机械抛光。 优选地，所沉积的导电材料的厚度由10纳米通过化学机械抛光减小至100nm。

公开(公告)号：WO2004019491A3

公开(公告)日：2005-05-06

申请号：PCT/EP0307015

申请日：2003-07-01

Applicant: INFINEON TECHNOLOGIES AG ,  NOKIA CORP ,  ELLAE JUHA SAKARI ,  TIMME HANS-JOERG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

Inventor： ELLAE JUHA SAKARI ,  TIMME HANS-JOERG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H7/42 ,  H01F17/00 ,  H03H7/38 ,  H03H9/00 ,  H03H9/58 ,  H03H9/70

CPC classification number: H03H9/0095 ,  H01F17/0006 ,  H01F2021/125 ,  H03H7/42

Abstract: A filter circuit comprising an unsymmetrical gate (202) and a substrate (S). A series circuit consisting of a filter stage (206) and a balancing member (208) is arranged between the symmetrical gate (204) the unsymmetrical gate (202). The balancing member (208) and the filter stage (206) are formed on the substrate (S).

Abstract translation: 一种滤波器电路，包括：一平衡端口（204），不平衡端口（202）和基板（S）。 的串联电路，其包括一个滤波器级（206）和一个Symmetrierbauglied（208）（204）布置在所述平衡端口之间以及所述不平衡端口（202）。 所述Symmetrierbauglied（208）和所述滤波器级（206）（S）形成在衬底上。

公开(公告)号：DE10052419B4

公开(公告)日：2006-10-19

申请号：DE10052419

申请日：2000-10-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  AIGNER ROBERT

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  G01L9/12 ,  G02B6/00 ,  H01L21/76 ,  H01L23/24 ,  H01L23/525

公开(公告)号：MXPA01001551A

公开(公告)日：2005-06-20

申请号：MXPA01001551

申请日：1999-08-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN

IPC: G01B7/28 ,  A61B5/117 ,  G06K7/08 ,  G06K9/00 ,  G06T1/00 ,  H01L31/00

Abstract: Un sistema en forma de red de superficies conductoras se utiliza para la formacion capacitiva de imagenes, en el cual entre los conductores (2) provistos para la medicion se utilizan conductores de apantallamiento (8). Durante varios ciclos de carga y descarga se conduce el potencial a cada uno de los conductores pertenecientes a un punto de la imagen, para evitar las corrientes de desplazamiento entre los condensadores de apantallamiento. Para la modificacion homogenea de los potenciales electricos en esos conductores puede por ejemplo utilizarse un conducto de compensacion con un amplificador operacional (9,10) retroacoplado.

公开(公告)号：DE50202672D1

公开(公告)日：2005-05-04

申请号：DE50202672

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HANDTMANN MARTIN ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H3/04 ,  H03H9/17

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.