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公开(公告)号：KR20200144496A
公开(公告)日：2020-12-29
申请号：KR20200072746
申请日：2020-06-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BIRNER ALBERT , BRECH HELMUT , TWYNAM JOHN
IPC: H01L29/778 , H01L21/02 , H01L29/20 , H01L29/66
Abstract: 일실시예에서, 반도체장치는, 적어도하나의Ⅲ족질화물의에피택셜성장을지지할수 있는제 1 표면을갖는지지층과, 지지층의제 1 표면상에위치한에피택셜Ⅲ족질화물계다층구조물과, 상기지지층의제 1 표면에위치한기생채널억제영역을포함한다.
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