公开(公告)号：DE19944304A1

公开(公告)日：2001-04-05

申请号：DE19944304

申请日：1999-09-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UWE MATTHIAS ,  KIESLICH ALBRECHT ,  THIEME PETER ,  VOLAND LARS

IPC: H01L21/3105 ,  H01L23/528 ,  H01L27/108

Abstract: The semiconductor structure has a layer structure formed from a metallic layer deposition (1) and a dielectric layer (2). The metallic layer deposition is structured and includes contact surface areas (3). The dielectric layer is composed of a removable material and covers the metallic layer deposition. The contact surface areas are formed from many connected single structures (4) which are so narrow, that the removable material forms no surface areas on the single structures, which proceed parallel to the metallic layer deposition. The single structures are preferably narrower than the double thickness, with which the dielectric layer is layered between structures of the metallic layer deposition.

公开(公告)号：DE19944304C2

公开(公告)日：2001-09-20

申请号：DE19944304

申请日：1999-09-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UWE MATTHIAS ,  KIESLICH ALBRECHT ,  THIEME PETER ,  VOLAND LARS

IPC: H01L21/3105 ,  H01L23/528 ,  H01L27/108

Abstract: The semiconductor structure has a layer structure formed from a metalization layer and a dielectric layer. The metalization layer is patterned and has contact areas. The dielectric layer is composed of a depositable material and covers the metalization layer. The contact areas are formed from many contiguous individual structures, which are so narrow that the depositable material does not form, over the individual structures, any areas which run parallel to the metalization layer. The grid of contiguous individual structures forms a contact area which causes dielectric layer elevations which are particularly low and therefore easy to planarize.