公开(公告)号：JP2009099954A

公开(公告)日：2009-05-07

申请号：JP2008225837

申请日：2008-09-03

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： WEBER HANS MARTIN ,  ZUNDEL MARKUS

IPC: H01L21/301

CPC classification number: H01L21/78

Abstract: PROBLEM TO BE SOLVED: To highly reliably and cost-effectively divide a semiconductor substrate, by accurately, reliably and cost-effectively thinning a semiconductor substrate to a desired thickness, then dividing the thinned layer using a simple and mechanical method.
SOLUTION: The method for dividing the semiconductor substrate 10 involves the process of providing the semiconductor substrate 10. At least one separating trench 15 is produced at a front side of the semiconductor substrate 10. At least one layer 20 is produced at the bottom of the at least one separating trench 15. The semiconductor substrate 10 is thinned at a rear side of the semiconductor substrate 10 at least as far as the layer 20 at the bottom of the at least one separating trench 15. The layer 20 is severed in order to divide the semiconductor substrate 10 into individual pieces.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了将半导体衬底准确可靠且成本有效地薄化到期望的厚度，将半导体衬底高度可靠且经济地划分，然后使用简单且机械的方法分割薄层。 解决方案：用于分割半导体衬底10的方法包括提供半导体衬底10的工艺。在半导体衬底10的前侧产生至少一个分离沟槽15.至少一个层20在 至少一个分离沟槽15的底部。半导体衬底10在半导体衬底10的后侧至少与在至少一个分离沟槽15的底部的层20一样薄。层20被切断 以便将半导体衬底10分成单独的部分。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：DE102006046869A1

公开(公告)日：2008-04-03

申请号：DE102006046869

申请日：2006-10-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS MARTIN ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  ZUNDEL MARKUS

IPC: H01L21/302

Abstract: The method involves thinning a semiconductor wafer (10) in which functional areas of a semiconductor device are formed. A trench with preset depth is produced in a front side (12) of the semiconductor wafer. The trench is used as a thickness-criterion for controlling the thinning of the wafer. An electrode is provided in the trench, and electrical resistance and electrical capacitance between the electrode and a rear side (13) of the semiconductor wafer is measured. Independent claims are also included for the following: (1) a manufacturing device for a semiconductor device, comprising a holding device (2) a semiconductor wafer, comprising a front side and a rear side.

公开(公告)号：DE102006048586B4

公开(公告)日：2008-10-30

申请号：DE102006048586

申请日：2006-10-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS MARTIN

IPC: H01L21/301

Abstract: The method involves applying a self-supporting, prefabricated metal structure (30) on a front side (11) of a semiconductor wafer (10) and isolating a semiconductor device after application of the metal structure. The metal structure includes a multiplicity of support units that are attached to the semiconductor device, where the support units are connected by bars. Hollow and/or intermediate spaces on the front side of the semiconductor wafer are filled with an insulating material. The wafer is thinned after the application of the metal structure. Independent claims are also included for the following: (1) a semiconductor wafer with a front side (2) a manufacturing device for semiconductor devices.

公开(公告)号：DE102006037789A1

公开(公告)日：2008-02-14

申请号：DE102006037789

申请日：2006-08-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS MARTIN

IPC: H01L21/301

Abstract: The method involves etching separating trenches (14a,14b) of defined depth in the first main surface in which the significant functional regions of the semiconducting devices (13) are formed and reducing the wafer (11) from the second main surface until the reduced second main surface reaches the trenches and the semiconducting devices are separated. An independent claim is also included for a method of manufacturing a semiconducting device.

公开(公告)号：DE102006048586A1

公开(公告)日：2008-04-17

申请号：DE102006048586

申请日：2006-10-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS MARTIN

IPC: H01L21/301

Abstract: The method involves applying a self-supporting, prefabricated metal structure (30) on a front side (11) of a semiconductor wafer (10) and isolating a semiconductor device after application of the metal structure. The metal structure includes a multiplicity of support units that are attached to the semiconductor device, where the support units are connected by bars. Hollow and/or intermediate spaces on the front side of the semiconductor wafer are filled with an insulating material. The wafer is thinned after the application of the metal structure. Independent claims are also included for the following: (1) a semiconductor wafer with a front side (2) a manufacturing device for semiconductor devices.

公开(公告)号：DE10316710B3

公开(公告)日：2004-08-12

申请号：DE10316710

申请日：2003-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS MARTIN

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/861

Abstract: Semiconductor layer (110) with first side (101) is prepared and doped with charge carriers of first and second types. Trench (20) extends into doped layer (110). Thermal oxidation conversion reaction changes regions of first semiconductor layer in sidewall regions of trench into semiconductor connecting layers (30). Concentration changes in both types of charge carrier result in regions (40) of layer (110) adjacent to connecting layer. A semiconductor layer (110) with a first side (101) is prepared. This is doped throughout with charge carriers of first and second conduction types. A trench (20) extends into the doped semiconductor layer (110). A conversion reaction (thermal oxidation) is brought about. This changes regions of the first semiconductor layer in sidewall regions of the trench into semiconductor connecting layers (30). Concentration changes in both types of charge carrier result, in regions (40) of the semiconductor layer (110) adjacent to the semiconductor connecting layer. An independent claim is included for a corresponding manufacturing process.