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    7.
    发明专利
    未知

    公开(公告)号：DE102006043163A1

    公开(公告)日：2008-03-27

    申请号：DE102006043163

    申请日：2006-09-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KOBLINSKI CARSTEN VON ,  KROENER FRIEDRICH ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  KRAFT DANIEL ,  HELLMUND OLIVER

    IPC: H01L23/482 ,  H01B1/02 ,  H01L21/479

    Abstract: A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another.

    Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer
    8.
    发明专利
    Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer 未知

    公开(公告)号：DE102006030869A1

    公开(公告)日：2008-01-10

    申请号：DE102006030869

    申请日：2006-07-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FATHULLA AHMAD ,  LACKNER GERALD ,  RUPP THOMAS ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  SCHOENHERR HELMUT ,  SCHULZE HANS-JOACHIM

    IPC: H01L21/306 ,  C30B25/02

    Abstract: The production of a semiconductor wafer useful in e.g. chip cards, comprises providing a semiconductor substrate (1) from a first semiconductor material with a first surface and a second surface, which faces the first surface, applying a first semiconductor layer (2) from a second semiconductor material epitaxially on the second surface, and partially removing the substrate from the first semiconductor layer. The epitaxial application of a second semiconductor layer (3) from a third semiconductor material on the first semiconductor layer takes place to the desired target thickness. The production of a semiconductor wafer useful in e.g. chip cards, comprises providing a semiconductor substrate (1) from a first semiconductor material with a first surface and a second surface, which faces the first surface, applying a first semiconductor layer (2) from a second semiconductor material epitaxially on the second surface, and partially removing the substrate from the first semiconductor layer. The epitaxial application of a second semiconductor layer (3) from a third semiconductor material on the first semiconductor layer takes place to the desired target thickness. After the partial removing, the first semiconductor layer is partly removed via corroding. Before corroding a prefabricated device is attached as an etching mask at the first surface of the substrate. The device covers an external area of the first surface and limits an opening that releases an internal area of the first surface of the substrate, and is again removed after corroding. A semiconductor component (4) is formed in the first- and second semiconductor layer before the partial removing of the substrate.

    Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area
    9.
    发明专利
    Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area 未知

    公开(公告)号：DE102006015781A1

    公开(公告)日：2007-10-11

    申请号：DE102006015781

    申请日：2006-04-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FATHULLA AHMAD ,  LACKNER GERALD ,  GROMMES WALTHER ,  SANTOS RODRIGUEZ FRANCISCO JAV

    IPC: C30B33/00 ,  H01L21/302

    Abstract: The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area. The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area and in comparison to the inner area occupies small portion of the semiconductor wafer. At the first surface a semiconductor element in the inner area is formed. An independent claim is included for a method for the production of semiconductor wafer.

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