公开(公告)号：DE69935100D1

公开(公告)日：2007-03-29

申请号：DE69935100

申请日：1999-08-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTSCHE MARTIN ,  STROBL PETER ,  WEGE MP FE PI ,  LUEKEN EIKE ,  STOJAKOVIC GEORG ,  SPULER BRUNO

IPC: H01L21/302 ,  H01L21/3213 ,  C23C16/18 ,  H01L21/02 ,  H01L21/3065

Abstract: A method for reducing polymer deposition on vertical surfaces of metal lines etched from a metallization layer disposed above a substrate. The method includes forming a hard mask layer above the metallization layer and providing a photoresist mask above the hard mask layer. The method further includes employing the photoresist mask to form a hard mask from the hard mask layer. The hard mask has patterns therein configured to form the metal lines in a subsequent plasma-enhanced metallization etch. There is also included removing the photoresist mask. Additionally, there is included performing the plasma-enhanced metallization etch employing the hard mask and an etchant source gas that includes Cl2 and at least one passivation-forming chemical, wherein the plasma-enhanced metallization etch is performed without employing photoresist to reduce the polymer deposition during the plasma-enhanced metallization etch.