公开(公告)号：DE102005003248A1

公开(公告)日：2006-07-27

申请号：DE102005003248

申请日：2005-01-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZELLER CHRISTOPH ,  STRACK HELMUT

IPC: G01R31/26 ,  H01L21/336 ,  H01L21/66

Abstract: The method involves attaching a bonding wire at a gate contact (G) of a power transistor which is integrated in a semiconductor body, using a bond medium. A test potential is applied to the wire before attaching an end of the bonding wire to a connection contact that is connected to the gate contact. Another test potential is applied between the gate contact and a source contact (S), to determine a faulty current : An independent claim is also included for a semiconductor device comprising a power transistor.

公开(公告)号：DE19819542C2

公开(公告)日：2002-10-24

申请号：DE19819542

申请日：1998-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAZURE-ESPEJO CARLOS ,  ZELLER CHRISTOPH

IPC: G01J1/46 ,  G01D5/18 ,  G11C7/00 ,  G11C11/22 ,  G11C11/34 ,  G11C27/00 ,  G11C27/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/146 ,  H01L27/22 ,  H01L31/00

Abstract: A circuit includes a sensor delivering a charge, a capacitor non-volatilely storing the charge, and a read and reset circuit reading out the stored charge. The capacitor has further connection terminals connected to the read and reset circuit and in parallel with the sensor terminals, and a ferroelectric storage dielectric intermittently connected to the sensor. The sensor can be a photodiode, a phototransistor, a Hall sensor, or a thermoelement. A switch can be connected between one of the further terminals and one of the sensor terminals. Preferably, the switch is a transistor and a drive circuit drives it. The sensor and the capacitor are formed in a semiconductor body. During a storage procedure, time periods during which the switch is on are coordinated with the sensor and/or capacitor to keep an electrical field present between the further terminals below a maximum value at which the ferroelectric dielectric saturates.

公开(公告)号：DE102006006300A1

公开(公告)日：2007-08-23

申请号：DE102006006300

申请日：2006-02-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZELLER CHRISTOPH ,  DAHMEN MICHAEL

IPC: H01L23/544

Abstract: The arrangement has a semiconductor substrate (105) and electronic units formed on the substrate. The electronic units are covered by a passivation layer. Identification data (104) is provided over or in the substrate. The data clearly indicates the integrated circuit. The integrated circuit of different assembly groups is combined to a test group, where the electronic units are examined individually for their operability. An independent claim is also included for a method for personalizing an integrated circuit arrangement.

公开(公告)号：DE59900443D1

公开(公告)日：2001-12-20

申请号：DE59900443

申请日：1999-03-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAZURE-ESPEJO CARLOS ,  ZELLER CHRISTOPH

IPC: G01J1/46 ,  G01D5/18 ,  G11C7/00 ,  G11C11/22 ,  G11C11/34 ,  G11C27/00 ,  G11C27/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/146 ,  H01L27/22 ,  H01L31/00

Abstract: A circuit includes a sensor delivering a charge, a capacitor non-volatilely storing the charge, and a read and reset circuit reading out the stored charge. The capacitor has further connection terminals connected to the read and reset circuit and in parallel with the sensor terminals, and a ferroelectric storage dielectric intermittently connected to the sensor. The sensor can be a photodiode, a phototransistor, a Hall sensor, or a thermoelement. A switch can be connected between one of the further terminals and one of the sensor terminals. Preferably, the switch is a transistor and a drive circuit drives it. The sensor and the capacitor are formed in a semiconductor body. During a storage procedure, time periods during which the switch is on are coordinated with the sensor and/or capacitor to keep an electrical field present between the further terminals below a maximum value at which the ferroelectric dielectric saturates.