公开(公告)号：WO0118870A3

公开(公告)日：2001-08-02

申请号：PCT/EP0008707

申请日：2000-09-06

Applicant: MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/167 ,  H01L21/20

CPC classification number: H01L21/26513 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/167

Abstract: A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are provided as p-conductive regions, which are doped with indium, thallium and/or palladium, in a cluster-like manner inside an n-conductive region.

公开(公告)号：WO0052750A3

公开(公告)日：2001-08-09

申请号：PCT/DE0000677

申请日：2000-03-03

Applicant: INFINEON TECHNOLOGIES AG ,  HIRLER FRANZ ,  KANERT WERNER ,  GASSEL HELMUT ,  STRACK HELMUT ,  PAIRITSCH HERBERT

Inventor： HIRLER FRANZ ,  KANERT WERNER ,  GASSEL HELMUT ,  STRACK HELMUT ,  PAIRITSCH HERBERT

IPC: H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L21/225 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802

Abstract: The invention relates to a method for producing a body area for a vertical MOS transistor array in a semiconductor body, wherein the body area has at least one channel region disposed between the source area and the drain area and borders on a gate electrode. A first implantation of doping material is effected in the semiconductor body, wherein the maximum of doping material of the first implantation is placed in the back part of the channel region (11) within the semiconductor body. At least a second implantation of doping material is then effected with a smaller dose than in the first implantation, wherein the maximum of doping material of the second implantation lies within the semiconductor body below the maximum of doping material of the first implantation. Subsequently, the doping material is diffused off.

Abstract translation: 描述一种用于在半导体本体中的垂直MOS晶体管布置，其中所述体区包括至少一个沟道区，设置于栅极电极的源极区域和漏极区域和相邻之间产生的体区的过程。 有掺杂剂至该半导体本体的第一植入物，植入最大与沟道区（11）在半导体本体中的第一植入的复位。 接着进行掺杂材料中的至少一个第二注入具有比第一注入较低的剂量，植入低于最大值的最大注入所述第一注入的半导体主体内的第二植入的位置。 随后，执行掺杂材料的向外扩散。

公开(公告)号：DE102009015722B4

公开(公告)日：2020-07-09

申请号：DE102009015722

申请日：2009-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENINGER WERNER ,  SCHWAIGER JOSEF ,  SCHNEIDER LUDWIG ,  GEITNER OTTMAR ,  BRUNNBAUER MARKUS ,  MEYER THORSTEN ,  OTREMBA RALF ,  HOEGLAUER JOSEF ,  STRACK HELMUT ,  SCHLOEGEL XAVER

IPC: H01L21/77 ,  H01L21/56 ,  H01L23/31

Abstract: Verfahren zum Herstellen eines Halbleiterbauelements, mit den folgenden Schritten:Platzieren von mindestens zwei Halbleiterchips (3) auf einem Träger (1);Überdecken der mindestens zwei Halbleiterchips (3) mit einem Vergussmaterial (7), um einen vergossenen Körper (70) zu bilden;Dünnen des vergossenen Körpers (70), wodurch eine erste Hauptoberfläche der mindestens zwei Halbleiterchips (3) freigelegt wird;Ausbilden je einer Kontaktstelle (9) auf der freigelegten Hauptoberfläche der mindestens zwei Halbleiterchips (3) nach dem Dünnen;Aufbringen einer ersten Schicht (13, 19) aus leitfähigem Material über der ersten Hauptoberfläche der mindestens zwei Halbleiterchips (3) nach dem Ausbilden je einer Kontaktstelle (9), wobei die erste Schicht (13, 19) aus leitfähigem Material elektrisch mit der Kontaktstelle (9) an jedem der mindestens zwei Halbleiterchips (3) verbunden ist;Entfernen des Trägers (1) von den mindestens zwei Halbleiterchips (3); undZertrennen des vergossenen Körpers (70) derart, dass die mindestens zwei Halbleiterchips (3) vereinzelt werden, wobei die Halbleiterchips (3) Leistungshalbleiterchips sind.

公开(公告)号：DE102005011873B4

公开(公告)日：2010-04-22

申请号：DE102005011873

申请日：2005-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SIEMIENIEC RALF ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L21/265 ,  H01L29/06 ,  H01L29/36

公开(公告)号：DE10349582B4

公开(公告)日：2008-09-25

申请号：DE10349582

申请日：2003-10-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON DR-ING ,  HILLE FRANK ,  VYTLA RAJEEV KRISHNA ,  FALCK ELMAR ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  STRACK HELMUT

IPC: H01L29/861 ,  H01L21/26 ,  H01L21/329 ,  H01L29/32

公开(公告)号：DE102005039804A1

公开(公告)日：2007-03-15

申请号：DE102005039804

申请日：2005-08-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT ,  PFIRSCH FRANK

IPC: H01L29/78

Abstract: Drift path (5) or drift zone, extends laterally in a semiconductor body (7) between first and second electrodes (8, 9). Its material is type n. It is arranged on an insulating- or complementary, p type semiconductor substrate (10). On the top of the drift path (11), above the semiconductor body, the potential distribution structure (6) is arranged between first and second electrodes. The potential distribution structure divides the potential between these electrode in stages, producing a correspondingly-stepped field profile in the drift path below it. Insulation layer (13) intervenes between the underside (12) of the potential distribution structure and the top of the drift path. This (13) is SiO 2, Al 2O 3, or TiO 2. It is alternatively a silicon dioxide- or silicon nitride film. The potential distribution structure includes a layered capacitance between the electrodes on top of the drift path. This includes alternating conductive plates (15) and insulating plates (16). The surface normal (F) to these plates, is parallel to the drift path. Mean spacing between the conductive plates varies. Lateral capacity of the layered capacitance exceeds that of the drift path. In a variant design, a diode stack replaces the layered capacitance. Further variants based on the foregoing principles are described. Doping concentration in the drift path lies between 1 x 10 16> cm -3> and 2 x 10 17> cm -3>. The semiconductor component (1) is a lateral MOSFET, lateral JFET, lateral IGFET, PIN diode or Schottky diode. It has a planar gate structure or trench gate structure. The trench structure of the gate electrode (G) passes through a body zone (35). An independent claim IS INCLUDED FOR the corresponding method of manufacture.

公开(公告)号：DE102005011873A1

公开(公告)日：2006-09-21

申请号：DE102005011873

申请日：2005-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SIEMIENIEC RALF ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L21/265 ,  H01L29/06 ,  H01L29/36

Abstract: The method involves producing space agglomerates within a semiconductor body (2) e.g. silicon wafer, of a power transistor, while the wafer is irradiated with silicon ions or helium ions. Diffusion processes are accomplished in order to store heavy metal e.g. gold, in the agglomerate. The zone of increased ion recombination is produced in a body zone of the power transistor.

公开(公告)号：DE102005043913A1

公开(公告)日：2006-04-06

申请号：DE102005043913

申请日：2005-09-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  SCHULZE HOLGER ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/334 ,  H01L21/336

Abstract: A doped semiconductor zone is formed in semiconductor body (100) by introducing dopant particles to side of semiconductor body; irradiating semiconductor body via the one side with further particles in region containing the dopant particles; and carrying out thermal treatment by ways of which the semiconductor body is heated, in the region containing the dopant particles, to less than 700[deg]C to activate the implanted dopant particles.

公开(公告)号：DE10217610B4

公开(公告)日：2005-11-03

申请号：DE10217610

申请日：2002-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  STRACK HELMUT ,  TIHANYI JENOE ,  SCHULZE HANS-JOACHIM ,  KAPELS HOLGER

IPC: H01L21/285 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/32 ,  H01L29/45 ,  H01L29/78 ,  H01L21/28

Abstract: Metal-semiconductor contact comprises a metallizing layer (3) forming an ohmic metal-semiconductor contact arranged on a doped semiconductor layer (1). A first doping material is provided for doping of the semiconductor layer so that the electrically active doping concentration in the semiconductor layer is a fraction of the doping concentration in the semiconductor layer. Independent claims are also included for the following: (1) Semiconductor component arranged in a semiconductor body; (2) Integrated circuit containing the semiconductor component; and (3) Process for the production of the metal-semiconductor contact.

公开(公告)号：DE10239861A1

公开(公告)日：2004-03-18

申请号：DE10239861

申请日：2002-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L29/08 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78