公开(公告)号：JP2000292929A

公开(公告)日：2000-10-20

申请号：JP2000092100

申请日：2000-03-29

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： SCHROEDER UWE PAUL ,  GERHARD KUNKEL ,  ALOIS GUTMAN ,  SPULER BRUNO

IPC: G03F7/075 ,  G03F7/038 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve the etching resistance of a photoresist used in photolithography. SOLUTION: In the method of producing a photolithographic structure, the photoresist containing a photoactive component that responds to actinic radiation and a base resin having a protected active part is applied to a substrate, patternwise exposed to an effective dose of actinic radiation and exposed to a developer to form a patterned photoresist. The protected active part of the base resin is then made chemically reactive by deprotection, the formed reactive part is allowed to react with a silylating agent containing an etching protective component to incorporate the etching protective component into the structure of the base resin and the substrate is etched to product the objective photolithographic structure.

公开(公告)号：JP2000241989A

公开(公告)日：2000-09-08

申请号：JP2000038346

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： UWE PAUL SCHROEDER ,  GERHARD KUNKEL ,  ALOIS GUTMAN

IPC: H01L21/027 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To easily produce a photolithographic structure suitable for patterning in a far UV range. SOLUTION: A photoresist containing a base resin containing a protected active part that forms a reactive part under deprotection and a photoactive component readily sensitive to actinic radiation is applied to a substrate, patternwise exposed with an effective dose of the actinic radiation and exposed to a developer to form a patterned photoresist. The protected active part of the base resin is then deprotected to chemically form a reactive part, this reactive part is allowed to react with an aromatic ring-containing etch protector to incorporate the etch protector into the base resin and the substrate is etched.