公开(公告)号：JP2000315684A

公开(公告)日：2000-11-14

申请号：JP2000111181

申请日：2000-04-12

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： BUTT SHAHID ,  SCHROEDER UWE PAUL

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To provide a method for transferring an image to a surface by using a substrate layer in a front layer imaging lithography. SOLUTION: This method for etching comprises the steps of forming a substrate layer 14 on a surface and a front layer 16 on the layer 14, patterning the front layer to partly expose the substrate layer, forming a layer containing silicon on the exposed portion of the substrate layer, removing the front layer, exposing the substrate layer except a portion which is covered with the silicon layer, and etching the substrate layer except a portion having the silicon layer, thereby causing the surface to be expose.

公开(公告)号：JP2000292929A

公开(公告)日：2000-10-20

申请号：JP2000092100

申请日：2000-03-29

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： SCHROEDER UWE PAUL ,  GERHARD KUNKEL ,  ALOIS GUTMAN ,  SPULER BRUNO

IPC: G03F7/075 ,  G03F7/038 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve the etching resistance of a photoresist used in photolithography. SOLUTION: In the method of producing a photolithographic structure, the photoresist containing a photoactive component that responds to actinic radiation and a base resin having a protected active part is applied to a substrate, patternwise exposed to an effective dose of actinic radiation and exposed to a developer to form a patterned photoresist. The protected active part of the base resin is then made chemically reactive by deprotection, the formed reactive part is allowed to react with a silylating agent containing an etching protective component to incorporate the etching protective component into the structure of the base resin and the substrate is etched to product the objective photolithographic structure.

公开(公告)号：WO0223601A3

公开(公告)日：2002-09-06

申请号：PCT/US0126647

申请日：2001-08-27

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： STETTER MICHAEL ,  SCHROEDER UWE PAUL

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/31144

Abstract: A method for forming contact holes, in accordance with the present invention, includes forming a hard mask layer on a dielectric layer, forming an anti-reflection coating of less than or equal to 1000 angstroms in thickness on the hard mask layer, and forming a silicon containing imaging resist layer on the anti-reflection layer. The imaging resist layer is patterned and the anti-reflection coating and the hard mask are etched by employing the imaging resist layer as a mask. The dielectric layer is then etched by employing the hard mask as a mask.

Abstract translation: 根据本发明的形成接触孔的方法包括在电介质层上形成硬掩模层，在硬掩模层上形成小于或等于1000埃的抗反射涂层，并形成 防反射层上含硅成像抗蚀剂层。 对成像抗蚀剂层进行图案化，并使用成像抗蚀剂层作为掩模来蚀刻抗反射涂层和硬掩模。 然后通过使用硬掩模作为掩模来蚀刻介电层。

公开(公告)号：WO0203457A2

公开(公告)日：2002-01-10

申请号：PCT/US0121161

申请日：2001-07-02

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： BRASE GABRIELA ,  SCHROEDER UWE PAUL ,  HOLLOWAY KAREN LYNNE

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76808 ,  H01L23/5283 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnection pattern is formed over the surface of a silicon wafer in which both the vias and the trenches of the pattern are filled with copper. The process of filling the vias and trenches involves use of a silicon nitride film as an etch stop and the filling of the vias with an anti-reflection coating.

Abstract translation: 在硅晶片的表面上形成互连图案，其中图案的通孔和沟槽均填充有铜。 填充通孔和沟槽的过程涉及使用氮化硅膜作为蚀刻停止件并且用防反射涂层填充通孔。

公开(公告)号：DE10227211A1

公开(公告)日：2003-02-06

申请号：DE10227211

申请日：2002-06-18

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： SCHROEDER UWE PAUL ,  MONO TOBIAS

IPC: G03F9/00 ,  H01L21/762 ,  H01L23/544