Abstract:
A multi-layer integrated circuit (400) and method of manufacturing thereof having barbed vias (427) connecting conductive lines (468, 408). Circuit (400) includes a first dielectric layer (404) deposited on a substrate (402) and conductive lines (408) formed in the first dielectric layer (404). A second dielectric layer (462) is deposited over the first dielectric layer (404). Barbed vias (427) are formed having a substantially cylindrical portion (424) within the second dielectric layer (462) and a barbed portion (426) within conductive lines (408). Conductive lines (468) are formed over the barbed vias (427) within a the second dielectric layer (462). A region of the barbed via (427) barbed portion (406) extends beneath the second dielectric layer (462).
Abstract:
In an integrated circuit structure, the improvement comprising a wire bonded Cu-pad with Cu-wire component, wherein the Cu-pad Cu-wire component is characterized by self-passivation, low resistance, high bond strength, and improved resistance to oxidation and corrosion, the Cu-pad Cu-wire component comprising: a metallization-line; a liner separating the metallization line and a Cu-alloysurrounding a Cu-pad; a dielectric surrounding the liner; anda Cu-pad bonded to a Cu-alloy wire; the Cu-wire component being characterized by self-passivation areas on: a) a dopant rich interface in between the Cu-alloy and liner; b) a surface of the Cu-pad; c) a surface of the bond between the Cu-pad and the Cu-alloy wire; and d) a surface of the Cu-alloy wire.