BARBED VIAS FOR ELECTRICAL AND MECHANICAL CONNECTION BETWEEN CONDUCTIVE LAYERS IN SEMICONDUCTOR DEVICES
    1.
    发明申请
    BARBED VIAS FOR ELECTRICAL AND MECHANICAL CONNECTION BETWEEN CONDUCTIVE LAYERS IN SEMICONDUCTOR DEVICES 审中-公开
    用于半导体器件中的导电层之间的电气和机械连接的平衡VIAS

    公开(公告)号:WO02054446A3

    公开(公告)日:2003-11-06

    申请号:PCT/US0147380

    申请日:2001-12-04

    Abstract: A multi-layer integrated circuit (400) and method of manufacturing thereof having barbed vias (427) connecting conductive lines (468, 408). Circuit (400) includes a first dielectric layer (404) deposited on a substrate (402) and conductive lines (408) formed in the first dielectric layer (404). A second dielectric layer (462) is deposited over the first dielectric layer (404). Barbed vias (427) are formed having a substantially cylindrical portion (424) within the second dielectric layer (462) and a barbed portion (426) within conductive lines (408). Conductive lines (468) are formed over the barbed vias (427) within a the second dielectric layer (462). A region of the barbed via (427) barbed portion (406) extends beneath the second dielectric layer (462).

    Abstract translation: 一种多层集成电路(400)及其制造方法,其具有连接导线(468,408)的带倒钩的过孔(427)。 电路(400)包括沉积在衬底(402)上的第一介电层(404)和形成在第一介电层(404)中的导电线路(408)。 在第一介电层(404)上沉积第二介电层(462)。 带刺通孔(427)形成为在第二电介质层(462)内具有基本上圆柱形的部分(424)和在导线(408)内的有倒钩的部分(426)。 导电线(468)形成在第二电介质层(462)内的带倒钩的过孔(427)上。 倒钩通孔(427)倒钩部分(406)的区域在第二介电层(462)的下方延伸。

Patent Agency Ranking