公开(公告)号：WO0197284A3

公开(公告)日：2002-04-25

申请号：PCT/US0119001

申请日：2001-06-13

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： AMRACOST MICHAEL ,  SPULER BRUNO ,  BRASE GABRIELA ,  GUTMANN ALOIS

IPC: H01L21/768

CPC classification number: H01L21/76808

Abstract: A method is provided for forming a step in a layer of material (16). The method includes forming the layer over a substrate. A cavity (24) is formed in a portion of an upper surface of the layer. The formed cavity is filled with a filler material (26) to provide a substantially planar surface over the substrate. A photoresist layer is formed over the substantially planar surface over the substrate. An aperture (30) is formed in the photoresist layer in registration with the formed cavity. The aperture exposes a portion of the filler material. The exposed portion (32) of the filler material is removed along with a contiguous portion of the layer (16) to form the step in the indentation. The cavity may be either a trench or a via. A 'Trench First' approach and a 'Via First' approach are described.

Abstract translation: 提供了一种用于在材料层中形成台阶的方法。 该方法包括在衬底上形成该层。 在该层的上表面的一部分中形成空腔。 形成的空腔填充有填充材料，以在衬底上提供基本平坦的表面。 光致抗蚀剂层形成在衬底上的基本平坦的表面上。 光致抗蚀剂层中形成有与形成的空腔对准的孔。 孔径暴露了填充材料的一部分。 填充材料的暴露部分与层的连续部分一起被去除以形成凹陷中的台阶。 空腔可以是沟槽或通孔。 描述了“首先采取沟通”方式和“首选”方式。