公开(公告)号：DE10226571A1

公开(公告)日：2003-01-16

申请号：DE10226571

申请日：2002-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： BARTH HANS JOACHIM ,  BURRELL LLOYD G ,  FRIESE GERALD ,  STETTER MICHAEL

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522 ,  H01L23/525 ,  H01L27/10

公开(公告)号：WO02054486A3

公开(公告)日：2003-02-06

申请号：PCT/US0143902

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： BARTH HANS JOACHIM

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/82 ,  H01L23/525 ,  H01L23/532

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In an integrated circuit structure, the improvement comprising a self-passivating Cu-laser fuse with good resistance to oxidation and corrosion and improved adhesion in the interface between the fuse and metallization lines and a dielectric cap subsequent to blowing the fuse by an energizing laser, the fuse comprising: a metallization-line (13); a liner (12) separating the metallization line and a combination Cu-alloy seed layer (11) and a pure Cu layer (10) ; a dielectric (14) surrounding the liner; and a dielectric cap (15) disposed over the surrounding dielectric, the liner and the combination Cu-alloy seed layer and pure Cu layer; the laser fuse being characterized after laser energizing by dopant-rich self-passivation areas: a) on the open Cu-fuse surface; and b) in the interfaces between: (i) the Cu-alloy seed layer and the liners and dielectric; and (ii) between the pure Cu layer and the dielectric cap.

Abstract translation: 在集成电路结构中，改进包括具有良好的抵抗氧化和腐蚀的自钝化Cu-激光熔丝，并且在熔丝和金属化线之间的界面中提高了粘合性，以及在通过激励激光器熔化熔丝之后的介电盖， 所述熔断器包括：金属化线（13）; 分离金属化线和铜合金种子层（11）和纯Cu层（10）的衬垫（12）; 围绕所述衬垫的电介质（14）; 以及设置在周围电介质，衬垫和组合Cu合金种子层和纯Cu层之间的电介质盖（15）; 激光熔丝的特征在于通过富掺杂剂自钝化区域进行激光激发后：a）在开放的Cu熔丝表面上; 和b）在以下界面中：（i）Cu合金种子层和衬垫和电介质; 和（ii）在纯Cu层和电介质盖之间。

公开(公告)号：DE60133772D1

公开(公告)日：2008-06-05

申请号：DE60133772

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： BARTH HANS JOACHIM

IPC: H01L23/52 ,  H01L23/525 ,  H01L21/3205 ,  H01L21/82

Abstract: A method of forming a semiconductor device, such as a self-passivating fuse, includes patterning an opening in a dielectric to form a fuse. A seed-layer of a copper-alloy is deposited in the opening and the opening is filled with pure copper. The copper is planarized and a passivation layer is deposited. This passivation layer can be thinned over a fuse portion of the copper. The fuse portion can then be laser fused to form a crater in an area surrounding a blown copper fuse. Exposed portions of the pure copper can then be self-passivated by annealing the device.