公开(公告)号：DE10226571A1

公开(公告)日：2003-01-16

申请号：DE10226571

申请日：2002-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： BARTH HANS JOACHIM ,  BURRELL LLOYD G ,  FRIESE GERALD ,  STETTER MICHAEL

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522 ,  H01L23/525 ,  H01L27/10

公开(公告)号：US6600226B2

公开(公告)日：2003-07-29

申请号：US89316001

申请日：2001-06-27

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： FRIESE GERALD

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/58 ,  H01L21/00 ,  H01L23/48

CPC classification number: H01L24/05 ,  H01L22/32 ,  H01L24/11 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05558 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/85801 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/04941

Abstract: A structure for a bond pad used on a semiconductor device, in accordance with the present invention, includes a metal layer, an interconnect formed through a dielectric layer connecting to the metal layer and a bond pad having a first portion disposed over the metal layer and the interconnect, and a second portion disposed over the dielectric layer. The first portion includes a bond area for providing an attachment point for a connection, and the second portion includes a probe area for providing contact with a probe.