公开(公告)号：WO0191179A3

公开(公告)日：2002-04-11

申请号：PCT/US0116140

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： ALSMEIER JOHANN ,  LAROSA GIUSEPPE ,  LUKAITIS JOSEPH ,  REAMGARAJAN RAJESH

IPC: H01L21/762

CPC classification number: H01L21/76229 ,  H01L21/76237

Abstract: Semiconductor device and method of manufacturing the same are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. After formation of the oxide liner, first regions of the semiconductor substrate are masked, leaving second regions thereof exposed. N-type devices are to be formed in the first regions and p-type devices are to be formed in the second regions. N-type ions may then be implanted into sidewalls of the trenches in the second regions. The mask is stripped and formation of the semiconductor device may be carried out in a conventional manner. The n-type ions are preferably only implanted into sidewalls where PMOSFETs are formed.

Abstract translation: 提供半导体装置及其制造方法。 在半导体衬底中形成沟槽。 优选在沟槽的表面上形成薄的氧化物衬垫。 在形成氧化物衬垫之后，掩模半导体衬底的第一区域，使第二区域暴露。 在第一区域中将形成N型器件，并且在第二区域中将形成p型器件。 然后可以将N型离子注入到第二区域中的沟槽的侧壁中。 剥离掩模，并且可以以常规方式进行半导体器件的形成。 n型离子优选仅被注入形成PMOSFET的侧壁。

公开(公告)号：DE60134848D1

公开(公告)日：2008-08-28

申请号：DE60134848

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： ALSMEIER JOHANN ,  LAROSA GIUSEPPE ,  LUKAITIS JOSEPH ,  RENGARAJAN RAJESH

IPC: H01L21/762

Abstract: A semiconductor device and method of manufacturing the same are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. After formation of the oxide liner, first regions of the semiconductor substrate are masked, leaving second regions thereof exposed. N-type devices are to be formed in the first regions and p-type devices are to be formed in the second regions. N-type ions may then be implanted into sidewalls of the trenches in the second regions. The mask is stripped and formation of the semiconductor device may be carried out in a conventional manner. The n-type ions are preferably only implanted into sidewalls where PMOSFETs are formed.