公开(公告)号：DE60006162T2

公开(公告)日：2004-07-22

申请号：DE60006162

申请日：2000-12-08

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： HSU L ,  WORDEMAN R ,  JOACHIM HANS-OLIVER ,  WONG HING

IPC: G11C8/08 ,  G11C8/00

Abstract: A negative wordline DRAM array having n groups of m wordlines, in which one group is driven by a group decoder circuit (having a voltage swing between ground and a circuit high voltage (2 v)) and one driver circuit in each group is exposed to a boosted wordline high voltage (2.8 v) greater than the circuit high voltage, in which the wordline driver circuits have an output stage comprising a standard nfet in series with a high threshold voltage pfet, so that, during activation, the unselected driver circuits exposed to the boosted wordline high voltage have a very low leakage through the pfet, while the selected driver circuit has a high but tolerable leakage (2 muA) because Vqs on the nfet is nearly at the nfet threshold. The net active power from the entire array is less than that of a conventional configuration due to the reduced voltage swing, while the number of transistors exposed to high voltage stress is reduced from 9 to 1 and the number of buffer nfets required to reduce voltage drop across an active nfet is reduced from 8 to 1.

公开(公告)号：DE60011471D1

公开(公告)日：2004-07-15

申请号：DE60011471

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： HSU L ,  WEINFURTNER OLIVER ,  WORDEMAN R

IPC: H02M3/07

Abstract: A charge pump generator system and method is provided which more precisely maintains the level of an internally generated voltage supply by operating some or all of the available charge pumps depending upon the voltage level reached by the voltage supply. When the voltage supply is far from its target level, a first group and a second group of charge pumps are operated. The first group may preferably have a faster pumping rate or a greater number of charge pumps than the second group. When the voltage supply exceeds a first predetermined level, the first group of charge pumps is switched off while the second group remains on, such that the rate of charge transfer slows. The second group continues operating until a second, e.g. target, voltage level is exceeded. The slower rate of charge transfer then effective reduces overshoot, ringing and noise coupled onto the voltage supply line. Preferably, at least one charge pump operates in both standby and active modes, thereby reducing chip area.

公开(公告)号：DE60006162D1

公开(公告)日：2003-11-27

申请号：DE60006162

申请日：2000-12-08

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： HSU L ,  WORDEMAN R ,  JOACHIM HANS-OLIVER ,  WONG HING

IPC: G11C8/08 ,  G11C8/00

Abstract: A negative wordline DRAM array having n groups of m wordlines, in which one group is driven by a group decoder circuit (having a voltage swing between ground and a circuit high voltage (2 v)) and one driver circuit in each group is exposed to a boosted wordline high voltage (2.8 v) greater than the circuit high voltage, in which the wordline driver circuits have an output stage comprising a standard nfet in series with a high threshold voltage pfet, so that, during activation, the unselected driver circuits exposed to the boosted wordline high voltage have a very low leakage through the pfet, while the selected driver circuit has a high but tolerable leakage (2 muA) because Vqs on the nfet is nearly at the nfet threshold. The net active power from the entire array is less than that of a conventional configuration due to the reduced voltage swing, while the number of transistors exposed to high voltage stress is reduced from 9 to 1 and the number of buffer nfets required to reduce voltage drop across an active nfet is reduced from 8 to 1.

公开(公告)号：DE60011471T2

公开(公告)日：2005-06-09

申请号：DE60011471

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： HSU L ,  WEINFURTNER OLIVER ,  WORDEMAN R

IPC: H02M3/07

Abstract: A charge pump generator system and method is provided which more precisely maintains the level of an internally generated voltage supply by operating some or all of the available charge pumps depending upon the voltage level reached by the voltage supply. When the voltage supply is far from its target level, a first group and a second group of charge pumps are operated. The first group may preferably have a faster pumping rate or a greater number of charge pumps than the second group. When the voltage supply exceeds a first predetermined level, the first group of charge pumps is switched off while the second group remains on, such that the rate of charge transfer slows. The second group continues operating until a second, e.g. target, voltage level is exceeded. The slower rate of charge transfer then effective reduces overshoot, ringing and noise coupled onto the voltage supply line. Preferably, at least one charge pump operates in both standby and active modes, thereby reducing chip area.