Abstract:
A novel DRAM refresh method and system and a novel method of designing a low-power leakage monitoring device. With the DRAM refresh method, the refresh cycle time is adjusted based directly on the cell leakage condition. The method of designing a low-power leakage monitoring devices uses a memory cell identical to the cells in the real array. This monitor cell is designed so that it will represent the average cell or the worst cell leakage condition. If the leakage is severe, the refresh cycle time is significantly reduced, or halved. If the leakage level is very low or undetectable, then the refresh cycle time is significantly increased, or doubled. If the leakage is moderate, or in the normal range, the refresh time is optimized, so that the power consumption used for DRAM refresh is minimized. The advantages of this method over the existing method, that is, adjusting the refresh cycle time based on chip temperature include (1) the contributions from non-temperature dependent leakage factors are taken into consideration, (2) the present invention does not require different process steps, or extra process costs to integrate such device in the chip, and (3) the present invention is a straight forward method, the monitor cell does not need any calibration. In addition, its leakage mechanism and reliability concern are all identical to the cells in a real array.
Abstract:
Improved transistor array device performance is obtained by use of bias voltage regulation which tracks with a fraction of a monitor transistor threshold voltage. The circuitry and methods are especially useful for improving the performance of transistor array devices such as DRAM and embedded DRAM. These benefits are obtained especially when at least two bias voltages normally supplied to the array are regulated by tracking with a fraction of an actual threshold voltage of at least one monitor transistor. Performance improvements include improved reliability, wider operational bias conditions, reduced power consumption and (in the case of memory cells) improved retention time.
Abstract:
A charge pump generator system and method is provided in which on or more charge pumps are operated at multiple charging rates depending upon the level reached by a voltage supply. The system includes a limiter which provides a control signal based upon the level of the voltage supply. The control signal selects the frequency of a multiple frequency oscillator coupled thereto. The selected frequency determines the charge transfer rate of a charge pump used to maintain the voltage supply.
Abstract:
A charge pump generator system and method is provided which more precisely maintains the level of an internally generated voltage supply by operating some or all of the available charge pumps depending upon the voltage level reached by the voltage supply. When the voltage supply is far from its target level, a first group and a second group of charge pumps are operated. The first group may preferably have a faster pumping rate or a greater number of charge pumps than the second group. When the voltage supply exceeds a first predetermined level, the first group of charge pumps is switched off while the second group remains on, such that the rate of charge transfer slows. The second group continues operating until a second, e.g. target, voltage level is exceeded. The slower rate of charge transfer then effective reduces overshoot, ringing and noise coupled onto the voltage supply line. Preferably, at least one charge pump operates in both standby and active modes, thereby reducing chip area.
Abstract:
In a controller (100) for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of X states. A state storage device (106) is responsive to input signals indicating a change in the state diagram from a current state to a next state for generating a revised plurality of X state output signals comprising a true State signal and a complementary true State signal for the next state of the plurality of X states. An output arrangement (108) is responsive to the true State signal and the complementary true State signal in the revised plurality of X state output signals from the state storage device for generating separate predetermined ones of M output signals associated with said next state for controlling the generator system while providing substantially zero current consumption when the state diagram reaches a final state of the plurality of X states.
Abstract:
Apparatus is used to dynamically control the power output of generators (16A-16H) of a generator system on a chip (10) to load circuits on the chip. A power bus (14) is directed along at least one "spine" section (18) on the chip which may intersect with at least one "arm" section (19) on the chip for supplying power from the generators, which are coupled to the power bus in the "spine" section thereof, to the load circuits on the chip. The power bus has a feedback lead (32) from each end which is remote from the generators for providing a continuous measurement of a voltage drop occurring at each remote end. At least one detector circuit (100) is located at a predetermined point adjacent the generators of the chip for comparing a voltage from the generators measured at the predetermined point with the concurrent voltage drop measured at an associated remote end. In response to such comparison, the at least one detector circuit generates control signals (BOOST and SPEED) for transmission to the generators for altering a generated voltage to maintain a predetermined power level on the power bus in response to load changes caused by the circuits on the chip.
Abstract:
In a flexible programmable controller (100) for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of X states. A state storage device (106) is responsive to input signals indicating a Reset state or a change in the state diagram from a current state to a next state for generating a Reset and an associated complementary Set signal or a revised plurality of X state output signals comprising a true State signal and a complementary true State signal for the next state of the plurality of X states. An output arrangement (108) is responsive to the Reset and complementary Set signals or the true State signal and the complementary true State signal in the revised plurality of X state output signals from the state storage device for generating separate predetermined ones of M output signals (OUT0-OUT4) associated with one of the Reset state or next state for controlling the generator system.
Abstract:
In a controller for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of X states. An evaluation arrangement evaluates a combination of only a predetermined one of a plurality of N input signals from remote devices, and only a predetermined one of a plurality of X state signals indicating a current state in the state diagram at any instant of time. The controller generates a plurality of Y output signals having a predetermined logical value that indicates that a change from one state to a next state in the state diagram is to be made when the predetermined one of both the plurality of N input signals and the plurality of X state signals comprise a predetermined logical value. A state storage device is responsive to the predetermined one of a plurality of Y output signals having a predetermined logical value, and generates a revised plurality of X state output signals for transmission back to the evaluation arrangement indicating a change in the state diagram from a current state to a next state of the plurality of X states. An output arrangement is responsive to the revised plurality of X state output signals for generating separate predetermined ones of M output signals to remote devices associated with said next state for controlling the generator system.
Abstract:
A voltage pump system for programming fuses on a semiconductor chip, in accordance with the present invention, includes a first pump system (12) employing a supply voltage (VDD) of the semiconductor chip as an input. The first pump system supplies an output voltage (VPP) higher than the supply voltage on a first output line (16) without raising the supply voltage of the semiconductor chip. A second pump system (20) includes an input connected to the first output. The second pump system supplies an output voltage (VFuse) sufficient for programming electrical fuses on the semiconductor chip.
Abstract:
In a controller for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of X states. An evaluation arrangement evaluates a combination of only a predetermined one of a plurality of N input signals from remote devices, and only a predetermined one of a plurality of X state signals indicating a current state in the state diagram at any instant of time. The controller generates a plurality of Y output signals having a predetermined logical value that indicates that a change from one state to a next state in the state diagram is to be made when the predetermined one of both the plurality of N input signals and the plurality of X state signals comprise a predetermined logical value. A state storage device is responsive to the predetermined one of a plurality of Y output signals having a predetermined logical value, and generates a revised plurality of X state output signals for transmission back to the evaluation arrangement indicating a change in the state diagram from a current state to a next state of the plurality of X states. An output arrangement is responsive to the revised plurality of X state output signals for generating separate predetermined ones of M output signals to remote devices associated with said next state for controlling the generator system.