中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.022 seconds)

    ION SOURCE
    1.
    发明申请
    ION SOURCE 审中-公开
    离子源

    公开(公告)号：WO2013019129A2

    公开(公告)日：2013-02-07

    申请号：PCT/NZ2012000137

    申请日：2012-08-03

    Applicant: INST GEOLOG NUCLEAR SCIENCES ,  FUTTER RICHARD JOHN ,  MARKWITZ ANDREAS

    Inventor： FUTTER RICHARD JOHN ,  MARKWITZ ANDREAS

    CPC classification number: H01J37/08 ,  C23C14/046 ,  C23C14/48 ,  C23C14/562 ,  H01J3/04 ,  H01J27/14 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/061

    Abstract: The invention provides an ion source comprising first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis; at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities; an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar; a first electrical connection which extends from outside the cavity to the anode; and a gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity.

    Abstract translation: 本发明提供了一种离子源，其包括彼此间隔开以在其间形成空腔的第一和第二阴极极片，第一阴极极片的边缘与第二阴极极片的边缘间隔开以限定细长的阴极间隙 在极片的相应边缘之间，细长阴极间隙具有纵向轴线; 至少一个磁体布置成用于以相反的磁极性磁化所述第一和第二阴极极片; 位于空腔中的细长阳极，阳极与第一和第二阴极极片间隔开并且具有纵向轴线，细长阳极的纵向轴线和细长阴极间隙的纵向轴线基本上共面; 从空腔外部延伸到阳极的第一电连接; 以及从空腔外部延伸到腔体内部的气体供给导管，用于将气体引入空腔。

    Zinc oxide nanostructures
    4.
    发明专利
    Zinc oxide nanostructures 未知

    公开(公告)号：NZ609155A

    公开(公告)日：2014-10-31

    申请号：NZ60915509

    申请日：2009-04-14

    Applicant: INST GEOLOG NUCLEAR SCIENCES

    Inventor： KENNEDY JOHN VEDAMUTHU ,  FUTTER RICHARD JOHN ,  FANG FANG ,  MARKWITZ ANDREAS

    IPC: C01G9/02 ,  C01G9/03

    Abstract: Disclosed is a method for producing zinc oxide nanostructures, the method comprising: providing a zinc anode and a cathode in an arc discharge chamber, wherein the cathode is arranged horizontally in the arc discharge chamber and the anode is arranged vertically; supplying current to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise the anode and produce the zinc oxide nanostructures; terminating the current supply to the anode and the cathode; and collecting the resulting zinc oxide nanostructures. Also disclosed is a method for producing a sensor component, the method comprising: providing a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film; applying a mixture comprising zinc oxide nanostructures and a nonionic polymer to at least a portion of the gap in the conducting thin film and thereby bridge the gap; and optionally, annealing the mixture of zinc oxide nanostructures and nonionic polymer applied to the sensor substrate, to provide the sensor component. Further disclosed is a sensor component comprising: a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film; and a mixture comprising zinc oxide nanostructures and a nonionic polymer covering at least a portion of the gap in the conducting thin film, thereby bridging the gap.

Patent Agency Ranking