公开(公告)号：US20250089305A1

公开(公告)日：2025-03-13

申请号：US18817680

申请日：2024-08-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Yongliang Li ,  Huaizhi Luo ,  Jun Luo ,  Wenwu Wang

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A gate-all-around transistor and a method for manufacturing the same. The gate-all-around transistor comprises: a semiconductor substrate; a source, a drain, and at least one nanostructure layer, which are disposed on the semiconductor substrate; and a gate stack structure surrounding each nanostructure layer, where the at least one nanostructure layer is disposed between the source and the drain, each nanostructure layer comprises a first material layer and second material layers, the second material layers are disposed at two sides of the first material layer along a thickness direction of the first material layer, each of the first material layer and the second material layers is in contact with both the source and the drain, and at least a part of the second material layers is different from the first material layer in material.