公开(公告)号：US20170294478A1

公开(公告)日：2017-10-12

申请号：US15477191

申请日：2017-04-03

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hushan CUI ,  Jinjuan XIANG ,  Xiaobin HE ,  Tao YANG ,  Junfeng LI ,  Chao ZHAO

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/02327

Abstract: A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2m, m≧1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

公开(公告)号：US20160211351A1

公开(公告)日：2016-07-21

申请号：US15001087

申请日：2016-01-19

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guilei WANG ,  Hushan CUI ,  Huaxiang YIN ,  Junfeng LI ,  Chao ZHAO

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/67 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  H01L21/306 ,  C23C16/02

CPC classification number: H01L29/66795 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  C30B35/00 ,  H01L21/67167

Abstract: An apparatus and a method for epitaxially growing sources and drains of a FinFET device. The apparatus comprises: a primary chamber; a wafer-loading chamber; a transfer chamber provided with a mechanical manipulator for transferring the wafer; an etching chamber for removing a natural oxide layer on the surface of the wafer and provided with a graphite base for positioning the wafer; at least one epitaxial reaction chamber; a gas distribution device for supplying respective gases to the primary chamber, the wafer loading chamber, the transfer chamber, the etching chamber and the epitaxial reaction chamber; and a vacuum device. The wafer loading, transfer, etching, and epitaxial reaction chambers are all positioned within the primary chamber. The apparatus integrates the etching chamber and epitaxial reaction chamber to remove the natural oxide layer on the surface of the wafer in a condition of isolating water and oxygen before the epitaxial reaction has occurred.

Abstract translation: 一种用于外延生长FinFET器件的源极和漏极的装置和方法。 该装置包括：主室; 晶片加载室; 传送室，设置有用于传送晶片的机械操纵器; 用于去除晶片表面上的自然氧化物层并设置有用于定位晶片的石墨基底的蚀刻室; 至少一个外延反应室; 用于向主室，晶片装载室，传送室，蚀刻室和外延反应室供应各种气体的气体分配装置; 和真空装置。 晶片装载，转移，蚀刻和外延反应室都位于主室内。 在外延反应发生之前，在分离水和氧的条件下，将蚀刻室和外延反应室集成在晶片表面上去除天然氧化物层。