公开(公告)号：US20150325452A1

公开(公告)日：2015-11-12

申请号：US14647393

申请日：2012-12-20

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong ZHU ,  Jun LUO ,  Chunlong LI ,  Jian DENG ,  Chao ZHAO

IPC: H01L21/3105 ,  H01L21/265 ,  H01L21/321 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L29/10

CPC classification number: H01L21/76229 ,  H01L21/26513 ,  H01L21/308 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/31105 ,  H01L21/32115 ,  H01L21/32132 ,  H01L21/823481 ,  H01L29/1083 ,  H01L29/66795 ,  H01L29/6681

Abstract: A planarization process, the process including performing first sputtering on a material layer, with an area of the material layer which has a relatively low loading condition for sputtering shielded by a first shielding layer, removing the first shielding layer, and performing second sputtering on the material layer to planarize the material layer.

Abstract translation: 平面化处理，该方法包括在材料层上进行第一溅射，其中材料层的面积具有相对低的负载条件，用于由第一屏蔽层屏蔽的溅射，去除第一屏蔽层，以及在第二溅射 材料层以平坦化材料层。