公开(公告)号：US20160268391A1

公开(公告)日：2016-09-15

申请号：US14812490

申请日：2015-07-29

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qingzhu ZHANG ,  Lichuan ZHAO ,  Xiongkun YANG ,  Huaxiang YIN ,  Jiang YAN ,  Junfeng LI ,  Tao YANG ,  Jinbiao LIU

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/167 ,  H01L29/45 ,  H01L21/265

CPC classification number: H01L29/665 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28097 ,  H01L29/167 ,  H01L29/41791 ,  H01L29/66795

Abstract: A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.

Abstract translation: 一种形成金属硅化物的方法。 该方法包括：提供具有翅片的基板，形成在翅片上的栅极和形成在栅极的相对侧上的间隔件; 沉积Ti金属层; 硅化Ti金属层; 并除去未反应的Ti金属层。 由于Ti原子具有相对稳定的特性，扩散主要发生在Si原子上，而Ti原子在热退火过程中很少扩散。 结果，可以在耗尽区域中防止电流泄漏，从而可以降低衬底的漏电流。

公开(公告)号：US20150340464A1

公开(公告)日：2015-11-26

申请号：US14814003

申请日：2015-07-30

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Zhaoyun TANG ,  Jiang YAN

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L21/265 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/66621 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/308 ,  H01L29/0649 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78654

Abstract: A semiconductor device manufacturing method includes forming a gate opening in a semiconductor layer; forming a sacrificial gate in the gate opening; forming a source region and a drain region in the semiconductor layer in proximity to the gate opening; removing the sacrificial gate; and forming a gate stack comprising a replacement gate dielectric layer and a replacement gate conductor layer in the gate opening, wherein the gate opening is configured to define a thickness of a portion of the semiconductor layer for a channel region. Channel control in semiconductor devices formed according to the above method can be effectively improved.

Abstract translation: 半导体器件制造方法包括在半导体层中形成栅极开口; 在闸门开口形成牺牲栅; 在所述栅极开口附近的所述半导体层中形成源极区域和漏极区域; 去除牺牲门; 以及在所述栅极开口中形成包括替换栅极介电层和替换栅极导体层的栅极堆叠，其中所述栅极开口被配置为限定所述半导体层对于沟道区域的一部分的厚度。 可以有效地提高根据上述方法形成的半导体器件中的沟道控制。

公开(公告)号：US20160240382A1

公开(公告)日：2016-08-18

申请号：US14407210

申请日：2013-08-30

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hong YANG ,  Wenwu WANG ,  Jiang YAN ,  Weichun LUO

IPC: H01L21/28 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/321

CPC classification number: H01L21/28088 ,  H01L21/321 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/66545

Abstract: A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work function layer, and performing plasma treatment on at least one layer in the metal gate arrangement. In this way, it is possible to adjust the effective work function of the metal gate in a relatively flexible way.

Abstract translation: 一种用于调节金属门的有效功函数的方法。 该方法包括形成包括至少金属功函数层的金属栅极布置，并且对金属栅极布置中的至少一层进行等离子体处理。 以这种方式，可以以相对灵活的方式调整金属门的有效功能。