公开(公告)号：US20180197993A1

公开(公告)日：2018-07-12

申请号：US15849217

申请日：2017-12-20

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Jun LUO ,  Chao ZHAO ,  Shi LIU

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/167 ,  H01L29/66 ,  H01L21/311 ,  H01L21/265 ,  H01L21/285 ,  H01L21/321

CPC classification number: H01L29/7851 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66795

Abstract: The present invention relates to a semiconductor device and a method of manufacturing the same. There is provided a semiconductor device comprising: a semiconductor substrate with a fin; a gate intersecting with the fin and a source region and a drain region within the fin at both sides of the gate; metal silicides formed at the source region and the drain region and in contact with the source region and the drain region respectively; wherein there is a impurity dopant at a interface of the metal silicide in contact with the source/drain region, which is capable of reducing a Schottky barrier height between the metal silicide and the source/drain region. The provided semiconductor device can reduce the Schottky barrier height between the metal silicide and the source/drain region, thereby reducing the specific resistance of the contact.

公开(公告)号：US20180294342A1

公开(公告)日：2018-10-11

申请号：US15871690

申请日：2018-01-15

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Jinjuan XIANG ,  Xiaolei WANG ,  Hong YANG ,  Shi LIU ,  Junfeng LI ,  Wenwu WANG ,  Chao ZHAO

IPC: H01L29/66 ,  H01L29/49 ,  H01L21/265

CPC classification number: H01L29/66545 ,  H01L21/265 ,  H01L29/4966

Abstract: The present disclosure provides a method for manufacturing a transistor having a gate with a variable work function, comprising: providing a semiconductor substrate; forming a dummy gate stack on the semiconductor substrate and performing ion implantation on an exposed area of the semiconductor substrate at both sides of the dummy gate stack to form source/drain regions; removing the dummy gate and annealing the source/drain regions; providing an atomic layer deposition reaction device; introducing a precursor source reactant into the atomic layer deposition reaction device; and controlling an environmental factor for the atomic layer deposition device to grow a work function metal layer. The present disclosure also provides a transistor having a gate with a variable work function. The present disclosure may adjust a variable work function, and may use the same material system to obtain an adjustable threshold voltage within an adjustable range.