公开(公告)号：US09391073B2

公开(公告)日：2016-07-12

申请号：US14397822

申请日：2013-08-06

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huaxiang Yin ,  Xiaolong Ma ,  Weijia Xu ,  Qiuxia Xu ,  Huilong Zhu

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/306 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/30604 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/7853 ,  H01L29/7854

Abstract: A FinFET device and a method for manufacturing the same. The FinFET device includes a plurality of fins each extending in a first direction on a substrate; a plurality of gate stacks each being disposed astride the plurality of fins and extending in a second direction; a plurality of source/drain region pairs, respective source/drain regions of each source/drain region pair being disposed on opposite sides of the each gate stack in the second direction; and a plurality of channel regions each comprising a portion of a corresponding fin between the respective source/drain regions of a corresponding source/drain pair, wherein the each fin comprises a plurality of protruding cells on opposite side surfaces in the second direction.

Abstract translation: FinFET器件及其制造方法。 FinFET器件包括多个翅片，每个翅片沿基底上的第一方向延伸; 多个栅极堆叠，每个栅极叠堆叠跨越所述多个散热片并沿第二方向延伸; 多个源/漏区对，每个源极/漏极区对的各个源极/漏极区在第二方向上设置在每个栅极堆叠的相对侧上; 以及多个通道区域，每个沟道区域包括在相应的源极/漏极对的各个源极/漏极区域之间的相应鳍片的一部分，其中每个鳍片包括在第二方向的相对侧表面上的多个突起单元。