公开(公告)号：US12197282B2

公开(公告)日：2025-01-14

申请号：US18553929

申请日：2021-04-08

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qianhui Li ,  Qi Wang ,  Liu Yang ,  Yiyang Jiang ,  Xiaolei Yu ,  Jing He ,  Zongliang Huo ,  Tianchun Ye

IPC: G06F11/10 ,  G06F11/14

Abstract: A data recovery method for a flash memory includes: reading data from the flash memory by using preset read voltage; calculating a check node error rate corresponding to the data; calculating a read voltage adjustment step size according to the check node error rate; adjusting the preset read voltage according to the read voltage adjustment step size and reading data from the flash memory by using the adjusted preset read voltage, and repeating the operation of calculating a check node error rate corresponding to the data to operation of adjusting the preset read voltage according to the read voltage adjustment step size and reading data from the flash memory by using the adjusted preset read voltage, until the check node error rate is minimum; and selecting a read voltage corresponding to the minimum check node error rate to read data from the flash memory, so as to perform data recovery.