公开(公告)号：US20230263070A1

公开(公告)日：2023-08-17

申请号：US18003913

申请日：2020-12-31

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong Xing ,  Di Wang ,  Huai Lin ,  Long Liu ,  Yu Liu ,  Hangbing Lv ,  Changqing Xie ,  Ling Li ,  Ming Liu

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/85 ,  G11C11/16

CPC classification number: H10N50/10 ,  H10B61/22 ,  H10N50/85 ,  G11C11/161

Abstract: The present disclosure relates to a field of memory technical, and in particular to a magnetoresistive device, a method for changing a resistance state of the magnetoresistive device, and a synapse learning module. The magnetoresistive device includes a top electrode, a ferromagnetic reference layer, a tunneling layer, a ferromagnetic free layer, a spin-orbit coupling layer, and a bottom electrode that are arranged in sequence along a preset direction, where the spin-orbit coupling layer includes a first thickness region and a second thickness region distributed alternately, and a thickness of the first thickness region is different form a thickness of the second thickness region; and the ferromagnetic free layer includes a pinning region, and a position of the pinning region is in one-to-one correspondence with a position of the first thickness region.

公开(公告)号：US09418843B2

公开(公告)日：2016-08-16

申请号：US14760890

申请日：2013-01-17

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Dongmei Li ,  Xin Chen ,  Shengfa Liang ,  Jiebin Niu ,  Peiwen Zhang ,  Yu Liu ,  Xiaojing Li ,  Shuang Zhan ,  Hao Zhang ,  Qing Luo ,  Changqing Xie ,  Ming Liu

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/465 ,  G01N33/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L21/02565 ,  B82Y10/00 ,  B82Y40/00 ,  G01N33/004 ,  G01N33/005 ,  H01L21/02422 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02614 ,  H01L21/465 ,  Y02A50/243

Abstract: The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt. The present invention is simple and practical and the sensitivity and reliability of the doped sensor on the gas of CO and H2 are greatly improved.

Abstract translation: 本公开提供了一种用于制造原位掺杂有Pt的NiO的有序纳米线阵列的方法，包括：在耐高温和绝缘的衬底上生长Ni层; 在Ni层上施加光致抗蚀剂，通过在光致抗蚀剂上施加电子束蚀刻来图案化有序纳米线阵列的图案区域，在有序纳米线阵列的图案区域上生长Ni，用丙酮剥离光致抗蚀剂并蚀刻 Ni层，以便蚀刻生长在衬底表面上的Ni层，并将Ni留在有序纳米线阵列的图案区上以形成有序的Ni纳米线阵列; 将有序的Ni纳米线阵列浸入H2PtCl6溶液中，通过置换反应置换Ni纳米线阵列上的Pt; 并在氧化炉中氧化附着有Pt的Ni纳米线阵列，以获得掺杂有Pt的NiO的有序纳米线阵列。 本发明简单实用，掺杂传感器对CO和H2气体的灵敏度和可靠性大大提高。