公开(公告)号：US20160087062A1

公开(公告)日：2016-03-24

申请号：US14688523

申请日：2015-04-16

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huaxiang YIN ,  Yongkui ZHANG ,  Zhiguo ZHAO ,  Zhiyong LU ,  Huilong ZHU

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/4916 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/66537 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes: a plurality of fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of fin structures, wherein the gate stack structure includes a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of fin structures and beneath the gate stack structure; and source/drain regions on the plurality of fin structures and at both sides of the gate stack structure along the first direction.

Abstract translation: 半导体器件包括：沿着第一方向在衬底上延伸的多个翅片结构; 栅极堆叠结构，其沿着第二方向延伸并且跨越所述多个鳍状结构，其中所述栅极堆叠结构包括栅极导电层和栅极绝缘层，并且所述栅极导电层由掺杂的多晶半导体形成; 多个翅片结构中的沟槽区域和栅极堆叠结构下方的沟槽区域; 以及多个鳍结构上的源/漏区，以及沿着第一方向的栅叠层结构的两侧。