公开(公告)号：US20240071451A1

公开(公告)日：2024-02-29

申请号：US18261716

申请日：2021-01-21

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huai LIN ,  Guozhong XING ,  Zuheng WU ,  Long LIU ,  Di WANG ,  Cheng LU ,  Peiwen ZHANG ,  Changqing XIE ,  Ling LI ,  Ming LIU

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/1655 ,  G11C11/1657

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

公开(公告)号：US20240224820A1

公开(公告)日：2024-07-04

申请号：US18287462

申请日：2021-04-27

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Guozhong XING ,  Huai LIN ,  Zuheng WU ,  Jiebin NIU ,  Zhihong YAO ,  Dashan SHANG ,  Ling LI ,  Ming LIU

IPC: H10N70/20 ,  G11C13/00 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/20 ,  G11C13/0026 ,  G11C13/004 ,  G11C13/0069 ,  H10B63/30 ,  H10N70/841 ,  G11C2213/79

Abstract: The present disclosure provides a memristor, including a transistor and a resistive random access memory, where a drain electrode of the transistor is connected to a bottom electrode of the resistive random access memory; and the resistive random access memory includes: the bottom electrode, a resistive random access material layer, a current compliance layer and a top electrode from bottom to top, where the current compliance layer is configured to stabilize a fluctuation of a low resistance by reducing a surge current and optimizing a heat distribution, so as to improve a calculation accuracy of a Hamming distance.