公开(公告)号：US20240355921A1

公开(公告)日：2024-10-24

申请号：US18238947

申请日：2023-08-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Sen HUANG ,  Qimeng JIANG ,  Xinyue DAI ,  Xinhua WANG ,  Xinyu LIU

IPC: H01L29/778 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7789 ,  H01L29/08 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7783

Abstract: The folded channel gallium nitride based field-effect transistor includes: a base layer; a multi-heterojunction layer, including a channel layer and a barrier layer alternatingly stacked from bottom to top on a gallium nitride semi-insulating layer; a gallium nitride control layer on the multi-heterojunction layer and extending from one side of the channel region to at least a part of the groove; a current collapse suppression structure formed on the multi-heterojunction layer on another side of the channel region; a source electrode and a drain electrode that are respectively in contact with two sides of the multi-heterojunction layer on the gallium nitride semi-insulating layer; a gate electrode formed on the multi-heterojunction layer between the source electrode and the gallium nitride control layer; and a connecting structure passing over the gate electrode to electrically connect to the source electrode and the gallium nitride control layer.

公开(公告)号：US20210043761A1

公开(公告)日：2021-02-11

申请号：US16868708

申请日：2020-05-07

Applicant: INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES

Inventor： Sen HUANG ,  Xinhua WANG ,  Ke WEI ,  Xinyu LIU ,  Wen SHI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  G01N27/414

Abstract: A detector based on a gallium nitride-based enhancement-mode device and a manufacturing method thereof. The detector is a gas or solution detector. When the detector is used in electrolyte solution detection, electrolyte solution is located in the gate opening region and directly contacts the thin barrier layer to form a contact interface. The electrolyte solution affects interface charges at the contact interface, leading to a change in a concentration of the two-dimensional electron gas, and further a change in a current between the source and the drain. When the detector is used in a hydrogen-containing gas detection, the H concentration of the hydrogen-containing gas affects interface charges at the contact interface between the gate and the thin barrier layer, leading to a change in a concentration of the two-dimensional electron gas, and further a change in the current between the source and the drain.

公开(公告)号：US20170309736A1

公开(公告)日：2017-10-26

申请号：US15368098

申请日：2016-12-02

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Sen HUANG ,  Xinyu LIU ,  Xinhua WANG ,  Ke WEI ,  Qilong BAO ,  Wenwu WANG ,  Chao ZHAO

IPC: H01L29/778 ,  H01L29/20 ,  H01L21/306 ,  H01L29/15 ,  H01L29/66 ,  H01L29/205

CPC classification number: H01L29/7786 ,  H01L21/30621 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/432 ,  H01L29/66462

Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.

公开(公告)号：US20170125571A1

公开(公告)日：2017-05-04

申请号：US15333674

申请日：2016-10-25

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Sen HUANG ,  Xinyu LIU ,  Xinhua WANG ,  Ke WEI

IPC: H01L29/778 ,  H01L29/47 ,  H01L21/02 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7786

Abstract: A GaN-based enhancement-mode power electronic device and a method for manufacturing the same. The GaN-based enhancement-mode power electronic device comprises: a substrate; a thin barrier Al(In,Ga)N/GaN heterostructure formed on the substrate; a gate, a source, and a drain formed on the thin barrier Al(In,Ga)N/GaN heterostructure. An AlN or SiNx passivation layer is formed on access regions between the gate and the source and between the gate and the drain, respectively, such that two dimensional electron gas is recovered in channels of the thin barrier Al(In,Ga)N/GaN heterostructure below the MN passivation layer by utilizing the MN passivation layer having polarization characteristics, or by using the SiNx passivation layer with positive fixed bulk/interface charges, so as to reduce on-resistance of the device and inhibit high-voltage current collapse in the device.

公开(公告)号：US20170162398A1

公开(公告)日：2017-06-08

申请号：US15060406

申请日：2016-03-03

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xinyu LIU ,  Sen HUANG ,  Xinhua WANG ,  Ke WEI

IPC: H01L21/306 ,  H01L29/417 ,  H01L29/06 ,  H01L21/308 ,  H01L29/423

CPC classification number: H01L21/30621 ,  H01L21/3081 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

Abstract: A low-damage etching method for a III-Nitride structure is disclosed. The method comprises: forming an etching mask on the III-Nitride structure, which is formed on a substrate; and etching the III-Nitride with the etching mask, wherein a temperature of the substrate changes dynamically or is kept at a constant temperature point between 200° C. and 700° C. during the etching.