公开(公告)号：US12107974B1

公开(公告)日：2024-10-01

申请号：US17756314

申请日：2021-04-19

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng Zhang ,  Yiming Wang ,  Qirui Ren

IPC: H04L9/32 ,  H04L9/08

CPC classification number: H04L9/3278 ,  H04L9/0869 ,  H04L2209/12

Abstract: An encryption method includes: receiving cipher data which is binary data; determining target components in a resistive memory array according to values of respective bits in the cipher data; determining current values generated by respective columns of components according to the target components; and generating key data according to the current values generated by the respective columns of components. The present disclosure can effectively reduce computing power and power consumption of an encryption process in an edge device.

公开(公告)号：US12002509B2

公开(公告)日：2024-06-04

申请号：US17756315

申请日：2021-07-02

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng Zhang ,  Qirui Ren

IPC: G11C11/16 ,  G11C7/02 ,  G11C7/06 ,  G11C11/15 ,  G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0059 ,  G11C2013/0045

Abstract: A data readout circuit of a RRAM includes: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.

公开(公告)号：US11922257B2

公开(公告)日：2024-03-05

申请号：US17995859

申请日：2020-09-29

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng Zhang ,  Zhisheng Chen

IPC: G06K7/10

CPC classification number: G06K7/10366

Abstract: A signal processing method is applied to an RFID electronic tag, and includes: coding a digital baseband signal to obtain a coded signal; performing phase-shift keying modulation on the coded signal to obtain a first modulated signal; performing OFDM modulation on the first modulated signal to obtain a second modulated signal; and sending the second modulated signal to an RFID reader, by means of which the OFDM demodulation, phase-shift keying demodulation, and decoding are performed sequentially on the second modulated signal. According to the signal processing method and device, and the RFID system of one or more embodiments of present disclosure, the RFID system can be caused to effectively utilize bandwidth, thereby achieving high-speed transmission of signals and significantly reducing a bit error ratio of signal transmission.

公开(公告)号：US11893271B2

公开(公告)日：2024-02-06

申请号：US17904619

申请日：2020-07-23

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng Zhang ,  Renjun Song

IPC: G06N3/063 ,  G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/061 ,  G06F3/0673 ,  G06N3/063

Abstract: A computing-in-memory circuit includes a Resistive Random Access Memory (RRAM) array and a peripheral circuit. The RRAM array comprises a plurality of memory cells arranged in an array pattern, and each memory cell is configured to store a data of L bits, L being an integer not less than 2. The peripheral circuit is configured to, in a storage mode, write more than one convolution kernels into the RRAM array, and in a computation mode, input elements that need to be convolved in a pixel matrix into the RRAM array and read a current of each column of memory cells, wherein each column of memory cells stores one convolution kernel correspondingly, and one element of the convolution kernel is stored in one memory cell correspondingly, and one element of the pixel matrix is correspondingly input into a word line that a row of memory cells connect.