公开(公告)号：US11893271B2

公开(公告)日：2024-02-06

申请号：US17904619

申请日：2020-07-23

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng Zhang ,  Renjun Song

IPC: G06N3/063 ,  G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/061 ,  G06F3/0673 ,  G06N3/063

Abstract: A computing-in-memory circuit includes a Resistive Random Access Memory (RRAM) array and a peripheral circuit. The RRAM array comprises a plurality of memory cells arranged in an array pattern, and each memory cell is configured to store a data of L bits, L being an integer not less than 2. The peripheral circuit is configured to, in a storage mode, write more than one convolution kernels into the RRAM array, and in a computation mode, input elements that need to be convolved in a pixel matrix into the RRAM array and read a current of each column of memory cells, wherein each column of memory cells stores one convolution kernel correspondingly, and one element of the convolution kernel is stored in one memory cell correspondingly, and one element of the pixel matrix is correspondingly input into a word line that a row of memory cells connect.