公开(公告)号：JP2001210792A

公开(公告)日：2001-08-03

申请号：JP2000358422

申请日：2000-11-24

Applicant: INT RECTIFIER CORP

Inventor： CHEY CHRISTOPHER C ,  VUKICEVIC MARIJANA

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/695

Abstract: PROBLEM TO BE SOLVED: To provide a circuit for driving a power transistor of half-bridged configuration anticipating excessive negative swing at an output node. SOLUTION: Relating to a high-voltage integrated circuit(HVIC) chip where a resistor 32 is connected between a substrate of the chip and a ground, the resistor 32 limits the current flowing a diode 31 when the specific diode 31 of the chip is made conductive by a negative transient phenomenon at the output node, for significantly improved process for negative voltage spike.

公开(公告)号：DE10056833A1

公开(公告)日：2001-06-07

申请号：DE10056833

申请日：2000-11-16

Applicant: INT RECTIFIER CORP

Inventor： CHEY CHRISTOPHER C ,  VUKICEVIC MARIJANA

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/695 ,  H01L23/62 ,  H02M7/162

Abstract: Two gate drive circuits are provided on a substrate and connected in series to the half bridge circuit to activate the power transistors. The gate drive circuits are switched ON between a voltage source and a ground potential. A resistor is connected between the substrate and the ground potential in order to limit the current flowing through a parasitic diode based on the negative voltage peaks on an output node. The high-voltage semiconductor integrated circuit wafer (23) controls two power transistors (21,22) arranged in a half bridge circuit in which an excessive negative voltage amplitude is made possible on an output node between the transistors.

公开(公告)号：DE10056833C2

公开(公告)日：2003-03-20

申请号：DE10056833

申请日：2000-11-16

Applicant: INT RECTIFIER CORP

Inventor： CHEY CHRISTOPHER C ,  VUKICEVIC MARIJANA

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/695 ,  H01L23/62 ,  H02M7/162

Abstract: A high voltage integrated circuit (HVIC) chip with a resistor connected between the substrate of the chip and ground. The resistor substantially improves the handling of negative voltage spikes by limiting the current passing through the intrinsic diode of the chip when the diode conducts due to negative transients at the output node.

公开(公告)号：IT1313747B1

公开(公告)日：2002-09-17

申请号：ITMI990524

申请日：1999-03-12

Applicant: INT RECTIFIER CORP

Inventor： TAKAHASHI TOSHIO ,  TAM DAVID C ,  CHEY CHRISTOPHER C ,  DUBHASHI AJIT ,  PARRY JOHN ,  TCHAMDSOU ARISTIDE

IPC: G01R19/25 ,  H02P20060101 ,  H02P7/00 ,  H02P23/00 ,  H03F3/387 ,  H03K7/08 ,  H03M1/60

公开(公告)号：ITMI990524A1

公开(公告)日：2000-09-12

申请号：ITMI990524

申请日：1999-03-12

Applicant: INT RECTIFIER CORP

Inventor： TAKAHASHI TOSHIO ,  TAM DAVID C ,  CHEY CHRISTOPHER C ,  DUBHASHI AJIT ,  PARRY JOHN ,  TCHAMDSOU ARISTIDE

IPC: G01R19/25 ,  H02P20060101 ,  H02P7/00 ,  H02P23/00 ,  H03F3/387 ,  H03K7/08 ,  H03M1/60

公开(公告)号：DE19910755B4

公开(公告)日：2007-04-26

申请号：DE19910755

申请日：1999-03-11

Applicant: INT RECTIFIER CORP

Inventor： TAKAHASHI TOSHIO ,  TAM DAVID C ,  PARRY JOHN ,  TCHAMDSOU ARISTIDE ,  CHEY CHRISTOPHER C ,  DUBHASHI AJIT

IPC: H03K7/08 ,  G01R19/25 ,  H02P20060101 ,  H02P7/00 ,  H02P23/00 ,  H03F3/387 ,  H03M1/60

公开(公告)号：DE19910755A1

公开(公告)日：1999-10-28

申请号：DE19910755

申请日：1999-03-11

Applicant: INT RECTIFIER CORP

Inventor： TAKAHASHI TOSHIO ,  TAM DAVID C ,  PARRY JOHN ,  TCHAMDSOU ARISTIDE ,  CHEY CHRISTOPHER C ,  DUBHASHI AJIT

IPC: G01R19/25 ,  H02P20060101 ,  H02P7/00 ,  H02P23/00 ,  H03F3/387 ,  H03K7/08 ,  H03M1/60

Abstract: The circuit converts an analog current sense signal, in a motor drive controller circuit, from a high side reference potential to a low side reference potential for measurement and processing. The circuit comprises a section for converting the input signal, at a first potential, into a pulse width modulated (PWM) signal. A further circuit section is provided for level shifting the pulse width modulated signal from the first potential to a second potential.