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    SOLUTION FOR PRODUCING OXIDE CRYSTAL
    2.
    发明专利
    SOLUTION FOR PRODUCING OXIDE CRYSTAL 失效

    公开(公告)号：JP2002338393A

    公开(公告)日：2002-11-27

    申请号：JP2001144534

    申请日：2001-05-15

    Applicant: CHUBU ELECTRIC POWER ,  INT SUPERCONDUCTIVITY TECH

    Inventor： SUGA TOSHIHIRO ,  YAMADA YASUSHI ,  HIRABAYASHI IZUMI

    IPC: C30B29/22 ,  C30B17/00 ,  C30B19/04 ,  H01L21/208

    Abstract: PROBLEM TO BE SOLVED: To provide a solution for producing an oxide crystal, with which it is possible to improve the crystallinity of the oxide crystal when the oxide crystal having a Y123-type crystal structure is grown from a solution phase. SOLUTION: The solution is used for producing the oxide crystal by growing the oxide crystal having the Y123-type crystal structure from the solution phase by a liquid phase method. The solvent (melt) composition forming the solution phase is made to be a BaO-CuO-BaF2 system, and the atomic ratio of Ba to Cu is adjusted to be in the range of 42:58 to 20:80. Thereby, it becomes possible to lower the temperature at growing the crystal.

    SUPERCONDUCTING WIRE HAVING HIGH CRITICAL CURRENT DENSITY
    6.
    发明专利
    SUPERCONDUCTING WIRE HAVING HIGH CRITICAL CURRENT DENSITY 失效

    公开(公告)号：JPH11111080A

    公开(公告)日：1999-04-23

    申请号：JP28315597

    申请日：1997-10-01

    Applicant: INT SUPERCONDUCTIVITY TECH ,  NGK INSULATORS LTD ,  CHUBU ELECTRIC POWER ,  HITACHI LTD

    Inventor： ARAI YUSUKE ,  YAMADA YASUSHI ,  KAWASHIMA JUNICHI ,  BUN TAKEKUNI ,  HIRABAYASHI IZUMI ,  KOSHIZUKA NAOKI ,  HIGASHIYAMA KAZUHISA ,  FUJIWARA TETSUO

    IPC: C01G1/00 ,  C01G3/00 ,  H01B12/06 ,  H01L39/02

    Abstract: PROBLEM TO BE SOLVED: To improve critical current density in a magnetic field by the introduction of low inclination grain boundaries into a superconducting oxide film by forming a biaxially oriented superconducting oxide film on a metallic silver substrate having a 100} texture. SOLUTION: An oxide intermediate layer biaxially oriented in a substrate plane, a parallel plane of a substrate is proper in 100}, and magnesium oxide MgO is used as a material. When a lattice miss fit of oxide and superconducting oxide of this intermediate layer is high like 6 to 11%. The superconducting oxide growing on the oxide of the intermediate layer performs pseudo epitaxial growth having fluctuation in in-plane orientation. Due to this fluctuation, low inclination grain boundaries less than one degree of an inclination of a degree of not interrupting a path of a superconducting current, are generated in large numbers in a C axis oriented superconducting oxide film manufactured on the oxide of the intermediate layer. Since these low inclination grain boundaries operate as pin fastening points to trap a magnetic field, high critical current density in the magnetic field can be realized.

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