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公开(公告)号:WO0215266A2
公开(公告)日:2002-02-21
申请号:PCT/US0125060
申请日:2001-08-10
Applicant: INTEL CORP
Inventor: MU XIAO-CHUN , MA QING , FUJIMOTO HARRY
CPC classification number: H01L21/568 , H01L21/56 , H01L21/561 , H01L23/3114 , H01L23/4334 , H01L23/5389 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16 , H01L2224/20 , H01L2224/211 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/19041 , H01L2924/351 , H05K1/185 , H05K3/4602 , H01L2224/82 , H01L2224/83 , H01L2924/00
Abstract: A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s), wherein the encapsulation material includes at least one surface substantially planar to the microelectronic die active surface. A first dielectric material layer may be disposed on at least a portion of the microelectronic die active surface and the encapsulation material surface. At least one conductive trace is then disposed on the first dielectric material layer. The conductive trace(s) is in electrical contact with the microelectronic die active surface. At least one conductive trace extends adjacent the microelectronic die active surface and adjacent the encapsulation material surface.
Abstract translation: 一种微电子封装,其包括具有活性表面和至少一个侧面的微电子管芯。 封装材料邻近微电子管芯侧设置,其中封装材料包括至少一个与微电子管芯有效表面平面的表面。 第一介电材料层可以设置在微电子管芯有源表面和封装材料表面的至少一部分上。 然后至少一个导电迹线设置在第一介电材料层上。 导电迹线与微电子管芯有源表面电接触。 至少一个导电迹线在微电子管芯有源表面附近延伸并与封装材料表面相邻。
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公开(公告)号:AT429032T
公开(公告)日:2009-05-15
申请号:AT01962043
申请日:2001-08-10
Applicant: INTEL CORP
Inventor: MU XIAO-CHUN , MA QING , FUJIMOTO HARRY
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公开(公告)号:HK1055844A1
公开(公告)日:2004-01-21
申请号:HK03108126
申请日:2003-11-10
Applicant: INTEL CORP
Inventor: MU XIAO-CHUN , MA QING , FUJIMOTO HARRY
IPC: H01L20090101 , H01L21/56 , H01L21/60 , H01L21/68 , H01L23/31 , H01L23/538 , H05K1/18 , H05K3/46
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公开(公告)号:DE60138416D1
公开(公告)日:2009-05-28
申请号:DE60138416
申请日:2001-08-10
Applicant: INTEL CORP
Inventor: MU XIAO-CHUN , MA QING , FUJIMOTO HARRY
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公开(公告)号:AU8325701A
公开(公告)日:2002-02-25
申请号:AU8325701
申请日:2001-08-10
Applicant: INTEL CORP
Inventor: MU XIAO-CHUN , MA QING , FUJIMOTO HARRY
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