公开(公告)号：JP2012109598A

公开(公告)日：2012-06-07

申请号：JP2012011073

申请日：2012-01-23

Applicant: INTEL CORP

Inventor： MARK DOGSY ,  KAVALIEROS JACK ,  MATTHEW METZ ,  JUSTIN BLASK ,  DATTA SAMANT ,  CHOU ROBERT

IPC: H01L27/092 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device.SOLUTION: A CMOS semiconductor device comprises: a high-k gate dielectric with a theoretical metal:oxygen stoichiometry; an NMOS metal gate electrode containing an aluminide with a composition represented by MAl, where M is a transition metal, disposed on the high-k gate dielectric; and a PMOS metal gate electrode not containing an aluminide disposed on the high-k gate dielectric.