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    ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER
    2.
    发明申请
    ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER 审中-公开
    电子泵半导体激光器

    公开(公告)号：WO2008097330A2

    公开(公告)日：2008-08-14

    申请号：PCT/US2007072055

    申请日：2007-06-25

    Applicant: INTEL CORP ,  UNIV CALIFORNIA ,  BOWERS JOHN E ,  COHEN ODED ,  FANG ALEXANDER W ,  JONES RICHARD ,  PANICCIA MARIO J ,  PARK HYUNDAI

    Inventor： BOWERS JOHN E ,  COHEN ODED ,  FANG ALEXANDER W ,  JONES RICHARD ,  PANICCIA MARIO J ,  PARK HYUNDAI

    CPC classification number: H01S5/30 ,  G02B2006/12121 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/141 ,  H01S5/2214 ,  H01S5/223 ,  H01S5/34

    Abstract: An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.

    Abstract translation: 电泵浦混合渐逝激光的设备和方法。 例如，一种设备包括设置在硅中的光波导。 有源半导体材料设置在光波导上方，在光波导和有源半导体材料之间限定渐逝耦合界面，使得由光波导引导的光学模式与光波导和有源半导体材料两者重叠。 电流注入路径被限定为穿过有源半导体材料并且至少部分地与光学模式重叠，使得响应于沿着电流注入路径的电流注入响应于有源半导体材料的电泵浦而生成光，所述电流注入路径至少部分地与光学 模式。

    A Hybrid III-V silicon laser formed by direct bonding
    3.
    发明专利
    A Hybrid III-V silicon laser formed by direct bonding 未知

    公开(公告)号：GB2527440A

    公开(公告)日：2015-12-23

    申请号：GB201515760

    申请日：2012-03-17

    Applicant: INTEL CORP

    Inventor： HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

    IPC: H01S5/026 ,  H01S5/02 ,  H01S5/343

    Abstract: A hybrid III-V silicon laser 220 comprising a first semiconductor region 250 comprising layers of semiconductor materials from group III and group V semiconductor to form an active region; and a second semiconductor region 240 having a silicon waveguide directly bonded to the first semiconductor region, which comprising indium phosphide (InP); Wherein a first electrical contact 108 is coupled to the first semiconductor region and a pair of second electrical contacts 107 is bonded to the second semiconductor region, wherein electrical current flows from the first electrical contact to the second electrical contacts through the second semiconductor region. The bonding between the first and second semiconductor layers may be carried out at room temperature in a vacuum. In one embodiment a plurality of transmitters and receivers are included (see Figure 4).

    A HYBRID III-V SILICON LASER FORMED BY DIRECT BONDING
    4.
    发明申请
    A HYBRID III-V SILICON LASER FORMED BY DIRECT BONDING 审中-公开
    由直接结合形成的混合III-V硅激光器

    公开(公告)号：WO2012098471A3

    公开(公告)日：2012-11-22

    申请号：PCT/IB2012000518

    申请日：2012-03-17

    Applicant: INTEL CORP ,  HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

    Inventor： HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

    IPC: H01S5/343 ,  H01S5/20

    CPC classification number: H01S5/021 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2205

    Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

    Abstract translation: 本文描述了一种混合III-V硅激光器，其包括：第一半导体区域，其包括来自III族，IV族或V族半导体的半导体材料层以形成有源区; 以及第二半导体区域，其具有硅波导，并且在第一半导体区域的层的室温下通过直接结合到第二半导体区域的层而结合到第一半导体区域。

    A Hybrid III-V silicon laser formed by direct bonding
    5.
    发明专利
    A Hybrid III-V silicon laser formed by direct bonding 未知

    公开(公告)号：GB2527440B

    公开(公告)日：2016-03-09

    申请号：GB201515760

    申请日：2012-03-17

    Applicant: INTEL CORP

    Inventor： HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

    IPC: H01S5/026 ,  H01S5/02 ,  H01S5/343

    Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

    A hybrid III - V Silicon Laser Formed by direct Bonding
    6.
    发明专利
    A hybrid III - V Silicon Laser Formed by direct Bonding 未知

    公开(公告)号：GB2502473A

    公开(公告)日：2013-11-27

    申请号：GB201314802

    申请日：2012-03-17

    Applicant: INTEL CORP

    Inventor： HECK JOHN ,  BAR HANAN ,  JONES RICHARD ,  PARK HYUNDAI

    IPC: H01S5/02

    Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

    Electrically pumped semiconductor evanescent laser
    8.
    发明专利
    Electrically pumped semiconductor evanescent laser 未知

    公开(公告)号：GB2452656B

    公开(公告)日：2011-10-19

    申请号：GB0822741

    申请日：2007-06-25

    Applicant: INTEL CORP

    Inventor： BOWERS JOHN E ,  COHEN ODED ,  FANG ALEXANDER W ,  JONES RICHARD ,  PANICCIA MARIO J ,  PARK HYUNDAI

    IPC: H01S5/14 ,  H01S5/042

    Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

    Electrically pumped semiconductor evanescent laser
    9.
    发明专利
    Electrically pumped semiconductor evanescent laser 未知

    公开(公告)号：GB2452656A

    公开(公告)日：2009-03-11

    申请号：GB0822741

    申请日：2007-06-25

    Applicant: INTEL CORP

    Inventor： BOWERS JOHN E ,  COHEN ODED ,  FANG ALEXANDER W ,  JONES RICHARD ,  PANICCIA MARIO J ,  PARK HYUNDAI

    IPC: H01S5/14 ,  H01S5/042

    Abstract: An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.

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