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公开(公告)号:US11664290B2
公开(公告)日:2023-05-30
申请号:US17459993
申请日:2021-08-27
Applicant: INTEL CORPORATION
Inventor: Rahul Jain , Kyu Oh Lee , Siddharth K. Alur , Wei-Lun K. Jen , Vipul V. Mehta , Ashish Dhall , Sri Chaitra J. Chavali , Rahul N. Manepalli , Amruthavalli P. Alur , Sai Vadlamani
IPC: H01L23/31 , H01L21/48 , H01L21/56 , H01L23/498 , H01L23/532 , H01L23/538 , H01L23/00 , H01L25/065
CPC classification number: H01L23/3185 , H01L21/4853 , H01L21/4857 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L23/5381 , H01L23/5383 , H01L23/5386 , H01L23/53295 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0655 , H01L25/0657 , H01L2224/16227 , H01L2224/81 , H01L2224/83051 , H01L2924/18161
Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.
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公开(公告)号:US20170178988A1
公开(公告)日:2017-06-22
申请号:US14977670
申请日:2015-12-22
Applicant: Intel Corporation
Inventor: Robert F Cheney , Ashish Dhall , Suriyakala Ramalingam
IPC: H01L23/24 , H01L23/31 , H01L23/498 , H01L21/48 , H01L21/56
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/563 , H01L2224/131 , H01L2224/16227 , H01L2224/16245 , H01L2224/2929 , H01L2224/29339 , H01L2224/29355 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83951 , H01L2224/92125 , H01L2924/014 , H01L2924/00014 , H01L2924/00
Abstract: A method for forming an electrical device includes attaching a semiconductor die on a carrier. The method further includes dispensing a fillet material at at least one edge of the semiconductor die arranged on the carrier. The method further includes dispensing an underfill material into a gap between the semiconductor die and the carrier after dispensing the fillet material.
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公开(公告)号:US11935805B2
公开(公告)日:2024-03-19
申请号:US18133868
申请日:2023-04-12
Applicant: Intel Corporation
Inventor: Rahul Jain , Kyu Oh Lee , Siddharth K. Alur , Wei-Lun K. Jen , Vipul V. Mehta , Ashish Dhall , Sri Chaitra J. Chavali , Rahul N. Manepalli , Amruthavalli P. Alur , Sai Vadlamani
IPC: H01L23/31 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/498 , H01L23/532 , H01L23/538 , H01L25/065
CPC classification number: H01L23/3185 , H01L21/4853 , H01L21/4857 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L23/53295 , H01L23/5381 , H01L23/5383 , H01L23/5386 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0655 , H01L25/0657 , H01L2224/16227 , H01L2224/81 , H01L2224/83051 , H01L2924/18161
Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.
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公开(公告)号:US11158558B2
公开(公告)日:2021-10-26
申请号:US16464547
申请日:2016-12-29
Applicant: INTEL CORPORATION
Inventor: Rahul Jain , Kyu Oh Lee , Siddharth K. Alur , Wei-Lun K. Jen , Vipul V. Mehta , Ashish Dhall , Sri Chaitra J. Chavali , Rahul N. Manepalli , Amruthavalli P. Alur , Sai Vadlamani
IPC: H01L23/48 , H01L21/00 , H01L21/44 , H05K7/00 , H01R9/00 , H01L23/31 , H01L21/48 , H01L21/56 , H01L23/538 , H01L23/00 , H01L25/065 , H01L23/532 , H01L23/498
Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.
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公开(公告)号:US10269695B2
公开(公告)日:2019-04-23
申请号:US15607352
申请日:2017-05-26
Applicant: Intel Corporation
Inventor: Robert F. Cheney , Ashish Dhall , Suriyakala Ramalingam
IPC: H01L23/04 , H01L23/498 , H01L21/48 , H01L21/56
Abstract: A method for forming an electrical device includes attaching a semiconductor die on a carrier. The method further includes dispensing a fillet material at at least one edge of the semiconductor die arranged on the carrier. The method further includes dispensing an underfill material into a gap between the semiconductor die and the carrier after dispensing the fillet material.
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公开(公告)号:US20210391232A1
公开(公告)日:2021-12-16
申请号:US17459993
申请日:2021-08-27
Applicant: INTEL CORPORATION
Inventor: Rahul Jain , Kyu Oh Lee , Siddharth K. Alur , Wei-Lun K. Jen , Vipul V. Mehta , Ashish Dhall , Sri Chaitra J. Chavali , Rahul N. Manepalli , Amruthavalli P. Alur , Sai Vadlamani
IPC: H01L23/31 , H01L21/48 , H01L21/56 , H01L23/538 , H01L23/00 , H01L25/065 , H01L23/532 , H01L23/498
Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.
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公开(公告)号:US20210111088A1
公开(公告)日:2021-04-15
申请号:US16464547
申请日:2016-12-29
Applicant: INTEL CORPORATION
Inventor: Rahul Jain , Kyu Oh Lee , Siddharth K. Alur , Wei-Lun K. Jen , Vipul V. Mehta , Ashish Dhall , Sri Chaitra J. Chavali , Rahul N. Manepalli , Amruthavalli P. Alur , Sai Vadlamani
IPC: H01L23/31 , H01L25/065 , H01L23/00 , H01L23/538 , H01L21/48 , H01L21/56
Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.
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公开(公告)号:US20170263517A1
公开(公告)日:2017-09-14
申请号:US15607352
申请日:2017-05-26
Applicant: Intel Corporation
Inventor: Robert F. Cheney , Ashish Dhall , Suriyakala Ramalingam
IPC: H01L23/24 , H01L21/56 , H01L23/498 , H01L21/48 , H01L23/31
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/563 , H01L23/295 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/131 , H01L2224/16227 , H01L2224/16245 , H01L2224/26175 , H01L2224/2929 , H01L2224/29339 , H01L2224/29355 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83007 , H01L2224/83051 , H01L2224/83104 , H01L2224/83951 , H01L2224/92125 , H01L2924/014 , H01L2924/00014 , H01L2924/00
Abstract: A method for forming an electrical device includes attaching a semiconductor die on a carrier. The method further includes dispensing a fillet material at at least one edge of the semiconductor die arranged on the carrier. The method further includes dispensing an underfill material into a gap between the semiconductor die and the carrier after dispensing the fillet material.
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公开(公告)号:US09691675B1
公开(公告)日:2017-06-27
申请号:US14977670
申请日:2015-12-22
Applicant: Intel Corporation
Inventor: Robert F Cheney , Ashish Dhall , Suriyakala Ramalingam
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/563 , H01L2224/131 , H01L2224/16227 , H01L2224/16245 , H01L2224/2929 , H01L2224/29339 , H01L2224/29355 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83951 , H01L2224/92125 , H01L2924/014 , H01L2924/00014 , H01L2924/00
Abstract: A method for forming an electrical device includes attaching a semiconductor die on a carrier. The method further includes dispensing a fillet material at at least one edge of the semiconductor die arranged on the carrier. The method further includes dispensing an underfill material into a gap between the semiconductor die and the carrier after dispensing the fillet material.
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