Abstract:
Semiconductor package interposers having high-density and high-aspect ratio encapsulated interconnects, and semiconductor package assemblies incorporating such interposers, are described. In an example, a semiconductor package interposer includes several conductive interconnects encapsulated in a polymer substrate and having height dimensions greater than a cross-sectional dimension. The semiconductor package interposer may support a first semiconductor package above a second semiconductor package and may electrically connect die pins of the first semiconductor package to die pins of the second semiconductor package.
Abstract:
Disclosed herein are quantum computing (QC) assemblies, as well as related methods and devices. In some embodiments, a QC assembly may include a package substrate having a first face and an opposing second face, a quantum processing die coupled to the first face of the package substrate, and a control die coupled to the second face of the package substrate. The package substrate may include conductive structures electrically coupling the quantum processing die to the control die.
Abstract:
Disclosed herein are quantum computing (QC) package structures, as well as related methods and devices. In some embodiments, a QC package may include: a package substrate; a quantum processing die coupled to the package substrate; and a lid above the quantum processing die such that the quantum processing die is between the package substrate and a top portion of the lid, wherein the lid is electrically coupled to the quantum processing die and to the package substrate. In some embodiments, a QC package may include: a package substrate; and a quantum processing die coupled to the package substrate; wherein the quantum processing die includes at least one first stop element, the package substrate includes at least one second stop element, and the first stop elements are aligned with the second stop elements to provide a mechanical stop structure between the quantum processing die and the package substrate
Abstract:
Space-efficient underfilling techniques for electronic assemblies are described. According to some such techniques, an underfilling method may comprise mounting an electronic element on a surface of a substrate, dispensing an underfill material upon the surface of the substrate within a dispense region for forming an underfill for the electronic element, and projecting curing rays upon at least a portion of the dispensed underfill material to inhibit an outward flow of dispensed underfill material from the dispense region, and the underfill material may comprise a non-visible light (NVL)-curable material. Other embodiments are described and claimed.
Abstract:
Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.
Abstract:
Embodiments of a device package and a method of forming the device package are described. The device package has a substrate having a cavity and pads on at least one of a top and bottom surface, and a first die embedded in the cavity of the substrate. The device package includes a second die having an adhesive layer on a bottom surface of the second die, where the second die and the adhesive layer are disposed on the first die and substrate. The device package includes dies disposed on the second die and on top of one another to form a stack, wherein each die has die contacts on at least one of a top and bottom surface, where at least one of the die contacts of each die is electrically coupled to at least one of the die contacts of another die and pads of the substrate with interconnects.
Abstract:
A method of forming a package layer includes disposing dies in a cavity of a dam formed on the adhesive layer, forming a first encapsulation layer around the dies in the cavity of the dam, wherein the first encapsulation layer is formed below the top surfaces of first dies, and disposing second dies on the top surfaces of the first dies. The method further includes forming a second encapsulation layer around the second dies, the interconnects, and on a top surface of the first encapsulation layer in the cavity, wherein the second encapsulation layer is formed below the top surfaces of the topmost dies of the second dies, disposes third dies on the top surfaces of the topmost dies of the second dies, and forming a third encapsulation layer over and around the third dies, the remaining interconnects, and a top surface of the second encapsulation layer in the cavity.
Abstract:
Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.
Abstract:
Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.