SUBSTRATE WITH INTEGRATED RESISTIVE CIRCUIT ELEMENT AND METHOD OF PROVIDING SAME

    公开(公告)号:WO2019066815A1

    公开(公告)日:2019-04-04

    申请号:PCT/US2017/053793

    申请日:2017-09-27

    Abstract: Techniques and mechanisms for providing an integrated resistive circuit element of a substrate which includes one or more organic dielectric layers. In an embodiment, the substrate includes dielectric layer portions, wherein conductors variously extend each in a respective one of the dielectric layer portions to a side region thereof. The resistive circuit element, integrated in or on the substrate, adjoins each of the dielectric layer portions. Seed layers are variously coupled each between a resistive material of the circuit element and a respective one of the conductors. An additional catalytic seed layer portion is disposed between the resistive material and at least one dielectric layer. In another embodiment, processing to form the resistive circuit element include an electroless deposition of the resistive material.

    ZERO-MISALIGNMENT TWO-VIA STRUCTURES
    8.
    发明申请

    公开(公告)号:WO2019133015A1

    公开(公告)日:2019-07-04

    申请号:PCT/US2017/069153

    申请日:2017-12-30

    Abstract: Device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS directly coupled to the interconnect. The ZM2VS further includes the dielectric on a conductive pad, a first via on a first seed, and first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS also has a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

    ELECTROLESS METAL-DEFINED THIN PAD FIRST LEVEL INTERCONNECTS FOR LITHOGRAPHICALLY DEFINED VIAS

    公开(公告)号:WO2019066977A1

    公开(公告)日:2019-04-04

    申请号:PCT/US2017/054638

    申请日:2017-09-29

    Abstract: A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

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