Abstract:
A process flow to make an interconnect structure with one or more thick metal layers under Controlled Collapse Chip Connection (C4) bumps at a die or wafer level. The interconnect structure may be used in a backend interconnect of a microprocessor. The process flow may include forming an inter-layer dielectric with spray coating or lamination over a surface with high aspect ratio structures.
Abstract:
A thinned die is disposed on a heat sink and bonded by a thermal interface material (TIM) that includes a gold-tin solder. The thinned die exhibits a die-effective coefficient of thermal expansion (CTE) that substantially matches the CTE of the heat sink. A process of bonding the die includes thermal bonding. A process of bonding the thinned die to a heat sink before bonding the die to an electrical interposer. A computing system includes a semconductive die that is gold-tin bonded to the heat sink, and it is coupled to at least one input-output device.
Abstract:
A low cost packaging technique for microelectronic circuit chips fixes a die within an opening in a package core. At least one metallic build up layer is then formed on the die/core assembly and a grid array interposer unit is laminated to the build up layer. The grid array interposer unit can then be mounted within an external circuite using any of a plurality of mounting technologies (e.g., ball grid array (BGA), land grid array (LGA), pin grid array (PGA), surface mount technology (SMT), and/or others). In one embodiment, a single build up layer is formed on the die/core cassembly before lamination of the interposer.
Abstract:
A microelectronic assembly is provided, having thermoelectric elements formed on a die so as to pump heat away from the die when current flows through the thermoelectric elements. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. In another embodiment, the thermoelectric elements are on a backside of the die and electrically connected to a carrier substrate on a front side of the die. In a further embodiment, the thermoelectric elements are formed on a secondary substrate and transferred to the die.
Abstract:
A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw.
Abstract:
A low cost microelectronic circuit package includes a single build up metallization layer above a microelectronic die. At least one die is fixed within a package core using, for example, an encapsulation material. A single metallization layer is then built up over the die/core assembly. The metallization layer includes a number of landing pads having a pitch that allows the microelectronic device to be directly mounted to an external circuit board. In one embodiment, the metallization layer includes a number of signal landing pads within a peripheral region kof the layer and at least one power landing pad and one ground landing pad toward a central region of the layer.
Abstract:
Expanded bond pads are formed over a passivation layer on a semiconductor wafer before the wafer is diced into individual circuit chips. After dicing, the individual chips are packaged by fixing each chip within a package core and building up one or more metallization layers on the resulting assembly. In at least one embodiment, a high melting temperature (lead free) alternative bump metallurgy (ABM) form of controlled collapse chip connect (C4) processing is used to form relatively wide conducting platforms over the bond pads on the wafer.
Abstract:
An optical package (100) comprising an optoelectric element (104) and a substrate (102) having a trench (214) therein, the trench (214) extending to an edge of the substrate (102), a waveguide array (114) positioned in the trench (214), the waveguide array (114) extending to the edge of the substrate (102), and a lid (216) attached or near the edge (116) of the substrate (102) and spanning a width of the waveguide array (114), the lid (116) including a recess (404) having a bottom (406), wherein the bottom (406) is in direct contact with a surface (704) of the waveguide array (114). The lid (116) and the substrate (102) form a connector (118) for optically connecting the optical package (100) to other components.
Abstract:
An electrooptic assembly including a microelectronic package (20) and an optical substrate (62), wherein the optical substrate includes a coupler (70) and a waveguide (72). An electrooptic element (54) is disposed to convert an electrical signal from the microelectronic package (20) to an optical signal for transmission to the coupler (70) and waveguide (72), and/or to receive an optical signal and convert it to an electrical signal for transmission to the package (20).
Abstract:
A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw.