公开(公告)号：US11528811B2

公开(公告)日：2022-12-13

申请号：US17336008

申请日：2021-06-01

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K3/18 ,  H05K5/00

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

公开(公告)号：US20200236795A1

公开(公告)日：2020-07-23

申请号：US16634804

申请日：2017-09-27

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H05K5/00 ,  H05K3/18 ,  H01L23/498 ,  H01L21/48

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

公开(公告)号：US11116084B2

公开(公告)日：2021-09-07

申请号：US16634804

申请日：2017-09-27

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K3/18 ,  H05K5/00

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

公开(公告)号：US20210289638A1

公开(公告)日：2021-09-16

申请号：US17336008

申请日：2021-06-01

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K3/18 ,  H05K5/00

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.