Electronic substrate having an embedded etch stop to control cavity depth in glass layers therein

    公开(公告)号:US12255147B2

    公开(公告)日:2025-03-18

    申请号:US17243784

    申请日:2021-04-29

    Abstract: An electronic substrate may be fabricated having at least two glass layers separated by an etch stop layer, wherein a bridge is embedded within one of the glass layers. The depth of a cavity formed for embedding the bridge is control by the thickness of the glass layer rather than by controlling the etching process used to form the cavity, which allows for greater precision in the fabrication of the electronic substrate. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

    Patterning of dual metallization layers

    公开(公告)号:US11569160B2

    公开(公告)日:2023-01-31

    申请号:US16001482

    申请日:2018-06-06

    Inventor: Jeremy Ecton

    Abstract: Embodiments may relate to a semiconductor package that includes a routing trace coupled with a substrate. The routing trace may be linear on a side of the routing trace between the substrate and a top of the routing trace. The semiconductor package may further include a power trace coupled with the substrate. The power trace may be concave on a side of the power trace between the substrate and a top of the power trace. Other embodiments may be described and/or claimed.

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